0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRAMY20UP60B

IRAMY20UP60B

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IRAMY20UP60B - iMOTION Series 20A, 600V - International Rectifier

  • 数据手册
  • 价格&库存
IRAMY20UP60B 数据手册
PD-96955 Rev. A Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMY20UP60B Series 20A, 600V with Internal Shunt Resistor International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Non Punch-Through IGBT technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhaced package. A built-in temperature monitor and over-current and over-temperature protections, along with the shortcircuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a new developed single in line package (SiP3) with heatspreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. • Integrated Gate Drivers • Temperature Monitor and Protection • Overcurrent shutdown • Fully Isolated Package • Low VCE (on) Non Punch Through IGBT Technology. • Undervoltage lockout for all channels • Matched propagation delay for all channels • 5V Schmitt-triggered input logic • Cross-conduction prevention logic • Lower di/dt gate driver for better noise immunity • Motor Power range 0.75~2.2kW / 85~253 Vac • Isolation 2000VRMS min Features Absolute Maximum Ratings Parameter VCES / VRRM V+ IO @ TC=25°C IO @ TC=100°C IO FPWM PD VISO TJ (IGBT & Diodes) TJ (Driver IC) T Description IGBT/Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 2) PWM Carrier Frequency Power dissipation per IGBT @ TC =25°C Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M4 screw) Value 600 450 20 10 40 20 68 2000 -40 to +150 -40 to +150 0.7 to 1.17 kHz W VRMS °C Nm A Units V Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP 175µs ICES µA VFM V VBDFM RBR ∆RBR/RBR IBUS_TRIP V Ω % A www.irf.com 3 IRAMY20UP60B Inverter Section Switching Characteristics @ TJ= 25°C Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area --------------Min ------Typ 320 175 495 35 95 520 305 825 50 125 56 FULL SQUARE Max 460 225 685 70 --680 385 1065 100 --84 ns nC + Units Conditions IC=10A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=10A, V+=400V VCC=15V, L=2mH, TJ=125°C Energy losses include "tail" and diode reverse recovery See CT1 IC=15A, V =400V, VGE=15V TJ=150°C, IC=10A, VP=600V V+= 450V VCC=+15V to 0V TJ=150°C, VP=600V, See CT3 µJ ns µJ SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V V+= 360V, VGE=15V VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC 400ns VCC=VBS= 15V, IC=10A, V+=400V TC = 25°C TC = 100°C www.irf.com 5 IRAMY20UP60B Thermal and Mechanical Characteristics Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance Min ------3.5 Typ 1.6 2.2 0.1 --Max 1.8 3 ----Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK mm See outline Drawings Internal Current Sensing Resistor - Shunt Characteristics Symbol RShunt TCoeff PShunt TRange Parameter Resistance Temperature Coefficient Power Dissipation Temperature Range Min 16.8 0 ---40 Typ 17.0 ------Max 17.2 200 4.5 125 Units Conditions mΩ ppm/°C TC = 25°C W °C -40°C< TC
IRAMY20UP60B 价格&库存

很抱歉,暂时无法提供与“IRAMY20UP60B”相匹配的价格&库存,您可以联系我们找货

免费人工找货