IRCZ34

PD - 9.590A IRCZ34 HEXFET® Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS(on) = 0.050Ω ID = 30A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications. TO-220 HexSense Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or screw Max. 30 21 120 88 0.59 ±20 15 4.5 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1 N•m) Units A W W/°C V mJ A °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. — — — Max. — 0.50 — Units 1.7 — 62 °C/W ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. C-7 IRCZ34 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Current Sensing Ratio Output Capacitance of Sensing Cells Min. 60 ––– ––– 2.0 9.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 1340 ––– Typ. ––– 0.065 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 100 29 52 4.5 7.5 1300 640 96 ––– 9.0 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.050 Ω VGS = 10V, ID = 18A„ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 18A 25 VDS = 60V, VGS = 0V 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V -100 VGS = -20V 46 ID = 30A 11 nC VDS = 48V 22 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 30A ––– RG = 12Ω ––– RD = 1.0Ω, See Fig. 10 „ ––– nH LC Ciss Coss Crss r Coss ––– ––– ––– ––– 1480 ––– Between lead, 6 mm (0.25 in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 ID = 30A, VGS = 10V VGS = 0V, VDS = 25V, ƒ = 1.0MHz IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD pF ––– pF Source-Drain Ratings and Characteristics IS I SM V SD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 30 A 120 1.6 230 1.4 V ns nC ––– ––– ––– 120 ––– 0.70 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V „ TJ = 25°C, IF = 30A di/dt = 100A/µs „ D S Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ VDD = 25V, starting TJ = 25°C, L = 0.019mH RG = 25Ω, IAS = 30A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. C-8 IRCZ34 ID, Drain Current (Amps) VDS, Drain-to-Source Voltage (Volts) Fig. 1 Typical Output Characteristics, TC=25°C ID, Drain Current (Amps) VDS, Drain-to-Source Voltage (Volts) Fig. 2 Typical Output Characteristics, TC=175°C VDS, Gate-to-Source Voltage (Volts) RDS(on), Drain to Source On-Resistance (Normalized) ID, Drain Current (Amps) TJ, Junction Temperature (°C) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics C-9 IRCZ34 VDS, Drain-to-Source Voltage (Volts) Fig. 5 Typical Capacitance vs. Drain-toSource Voltage VGS, Gate-to-Source Voltage (Volts) Capacitance (pF) QG, Total Gate Charge (nC) Fig. 6 Typical Gate Charge vs. Gate-toSource Voltage ISD, Reverse Drain Current (Amps) VSD, Source-to-Drain Voltage (Volts) Fig. 7 Typical Source-Drain Diode Forward Voltage ID Drain Current (Amps) VDS, Drain-to-Source Voltage (Volts) Fig. 8 Maximum Safe Operating Area C-10 IRCZ34 ID, Drain Current (Amps) TC, Case Temperature (°C) Fig. 9 Maximum Drain Current vs. Case Temperature ID, Drain Current (Amps) Starting TJ, Junction Temperature (°C) Fig. 12c Maximum Avalanche Energy vs. Drain Current t1, Rectiangular Pulse Duration (seconds) Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case C-11 Thermal Repsonse (ZΘJC) IRCZ34 Sense Ratio (r) TJ, Junction Temperature (°C) Fig. 15 Typical HEXSense Ratio vs. Junction Temperature Sense Ratio (r) ID, Drain Current (Amps) Fig. 16 Typical HEXSense Ratio vs. Drain Current Sense Ratio (r) Fig. 18 HEXSense Ratio Test Circuit VGS, Gate-to-Source Voltage (Volts) Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C C-12 Fig. 19 HEXSense Sensing Cell Output Capacitance Test Circuit