IRF1010ELPBF

PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofile applications. ID = 84A‡ D2Pak IRF1010ES TO-262 IRF1010EL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84‡ 59 330 200 1.4 ± 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Typ. ––– ––– Max. 0.75 40 Units °C/W www.irf.com 1 06/29/04 IRF1010ES/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ Min. 60 ––– ––– 2.0 69 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 mΩ VGS = 10V, ID = 50A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 50A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 nC VDS = 48V 44 VGS = 10V, See Fig. 6 and 13 ––– VDD = 30V ––– ID = 50A ns ––– RG = 3.6Ω ––– VGS = 10V, See Fig. 10 „ Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3210 ––– VGS = 0V 690 ––– VDS = 25V 140 ––– pF ƒ = 1.0MHz, See Fig. 5 1180… 320† mJ IAS = 50A, L = 260µH Typ. ––– 0.064 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 78 48 53 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 84‡ showing the A G integral reverse ––– ––– 330 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V „ ––– 73 110 ns TJ = 25°C, IF = 50A ––– 220 330 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L = 260µH RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12) ƒ ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRF1010ES/LPbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 20µs PULSE WIDTH TJ = 175 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 84A I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C TJ = 175 ° C 100 2.0 1.5 1.0 0.5 10 4 5 6 7 V DS = 25V 20µs PULSE WIDTH 8 9 10 11 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1010ES/LPbF 6000 20 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd ID = 50A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance(pF) 4000 Ciss 12 3000 Coss 2000 8 1000 Crss 4 0 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 140 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = 175 ° C 100 100µsec 10 1 TJ = 25 ° C 10 1msec 0.1 0.0 V GS = 0 V 0.6 1.2 1.8 2.4 1 1 Tc = 25°C Tj = 175°C Single Pulse 10 10msec 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1010ES/LPbF 100 LIMITED BY PACKAGE 80 VDS VGS RG RD D.U.T. + ID , Drain Current (A) -VDD 60 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010ES/LPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM 600 VDS L DRIVER ID 20A 35A 50A RG 20V VGS D.U.T IAS tp + V - DD A 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1010ES/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010ES/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMB E R F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RECT IF IER LOGO AS S E MB LY LOT CODE PART NUMBE R F530S DAT E CODE P = DE S IGNAT ES LEAD-FRE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE EK 02 A = AS S E MB LY S IT E CODE 8 www.irf.com IRF1010ES/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMB LY LINE "C" Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT ER NAT IONAL RECT IF IER LOGO PART NU MBER AS S EMBLY LOT CODE DAT E CODE YEAR 7 = 1997 WEE K 19 LINE C OR INT E RNAT IONAL RECT IFIER L OGO PART NU MBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBL Y S IT E CODE AS S EMBL Y LOT CODE www.irf.com 9 IRF1010ES/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 10 www.irf.com