IRF1104PBF

PD - 94967 IRF1104PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS(on) = 0.009Ω G S ID = 100A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 100 … 71 400 170 1.11 ± 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.90 ––– 62 Units °C/W www.irf.com 1 02/02/04 IRF1104PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.009 Ω VGS = 10V, ID = 60A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 37 ––– ––– S VDS = 25V, ID = 60A ––– ––– 25 VDS = 40V, VGS = 0V µA ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 93 ID = 60A ––– ––– 29 nC VDS = 32V ––– ––– 30 VGS = 10V, See Fig. 6 and 13 „ ––– 15 ––– VDD = 20V ––– 114 ––– ID = 60A ns ––– 28 ––– RG = 3.6Ω ––– 19 ––– RD = 0.33 Ω, See Fig. 10 „ Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact ––– 2900 ––– VGS = 0V ––– 1100 ––– pF VDS = 25V ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 100… showing the A G integral reverse ––– ––– 400 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 60A, VGS = 0V „ ––– 74 110 ns TJ = 25°C, IF = 60A ––– 188 280 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 194µH max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Caculated continuous current based on maximum allowable RG = 25Ω, IAS = 60A. (See Figure 12) TJ ≤ 175°C ƒ ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS, junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 2 www.irf.com IRF1104PbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 100A I D , Drain-to-Source Current (A) 100 TJ = 175 ° C 2.0 1.5 10 TJ = 25 ° C 1 1.0 0.5 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1104PbF 5000 4000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 60A VDS = 32V VDS = 20V C, Capacitance (pF) 15 3000 Ciss 10 2000 Coss 1000 5 Crss 0 1 10 100 0 0 25 50 FOR TEST CIRCUIT SEE FIGURE 13 75 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C ID , Drain Current (A) 100 1000 10us 100us 1ms 10 10ms 10 100 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 TC = 25 ° C TJ = 175 ° C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1104PbF 100 LIMITED BY PACKAGE 80 V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + ID , Drain Current (A) -VDD 60 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 TC , Case Temperature ( °C) 75 100 125 150 175 Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1104PbF EAS , Single Pulse Avalanche Energy (mJ) 800 TOP 600 15V BOTTOM ID 24A 42A 60A VDS L DRIVER RG 20V D.U.T IAS tp + V - DD 400 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1104PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF1104PbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/