IRF150

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A  IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 38 24 152 150 1.2 ±20 150 38 15 5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 08/21/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — — 2.0 9.0 — — — — 50 8.0 25 — — — — — Typ Max Units — 0.13 — — — — — — — — — — — — — — — 6.1 — — V V/°C Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID =24A➃ VGS =10V, ID =38A ➃ VDS = VGS, ID =250µA VDS > 15V, IDS =24A➃ VDS=80V, VGS=0V VDS =80V VGS = 0V, TJ = 125°C VGS =20V VGS =-20V VGS =10V, ID= 38A VDS =50V VDD =50V, ID =38A, VGS =10V,RG =2.35Ω 0.055 Ω 0.065 4.0 V — S( ) 25 µA 250 100 -100 125 22 65 35 190 170 130 — nA Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS =25V f = 1.0MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3700 1100 200 — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 38 152 1.9 500 2.9 Test Conditions A V nS µc Tj = 25°C, IS =38A, VGS = 0V ➃ Tj = 25°C, IF = 38A, di/dt ≤100A/µs VDD ≤ 30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction to Case Junction to Ambient Min Typ Max Units — — — — 0.83 30 °C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF150 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF150 V DS VGS RG RD D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF150 1 5V VD S L D R IV E R RG D .U .T. IA S + - VD D A VGS 20V tp 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF150 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =50V, starting TJ = 25°C, Peak IL = 38A, VGS =10V VDD≤ 100V, TJ ≤ 150°C Suggested RG =2.35 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ ISD ≤ 38A, di/dt ≤300A/µs, Case Outline and Dimensions —TO-204AE (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7