IRF1503LPBF

PD - 95432 Typical Applications l l l IRF1503SPbF IRF1503LPbF HEXFET® Power MOSFET D 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free VDSS = 30V G S Benefits l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRF1503S TO-262 IRF1503L Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100°C = 25°C = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, V GS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value† Avalanche Current Repetitive Avalanche Energy… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. 190 130 75 960 200 1.3 ± 20 510 980 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A VGS EAS EAS (tested) IAR EAR TJ TSTG W W/°C V mJ A mJ °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.75 ––– 62 Units °C/W www.irf.com 1 06/21/04 IRF1503S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … Min. 30 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.028 2.6 ––– ––– ––– ––– ––– ––– 130 36 41 17 130 59 48 5.0 13 5730 2250 290 7580 2290 3420 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.3 mΩ VGS = 10V, ID = 140A „ 4.0 V VDS = 10V, ID = 250µA ––– S VDS = 25V, ID = 140A 20 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 140A 54 nC VDS = 24V 62 VGS = 10V„ ––– VDD = 15V ––– ID = 140A ns ––– RG = 2.5 Ω ––– VGS = 10V „ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 24V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.049mH RG = 25Ω, IAS = 140A. (See Figure 12). ƒ ISD ≤ 140A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 190 † showing the A G integral reverse ––– ––– 960 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V „ ––– 71 110 ns TJ = 25°C, IF = 140A ––– 110 170 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 2 www.irf.com IRF1503S/LPbF 1000 VGS 15V 1 0V 8 .0V 7 .0V 6 .0V 5 .5V 5 .0V BOTTOM 4.5V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 10 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25°C T J = 175°C Gfs, Forward Transconductance (S) T J = 175°C 160 ID, Drain-to-Source Current (Α) 120 100 T J = 25°C 80 40 VDS = 25V 20µs PULSE WIDTH 0 0 40 80 120 160 200 10 4.0 5.0 6.0 VDS = 25V 20µs PULSE WIDTH 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRF1503S/LPbF 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds 20 ID= 140A 8000 VGS , Gate-to-Source Voltage (V) VDS= 24V 16 C, Capacitance (pF) 6000 Ciss 12 4000 8 Coss 2000 4 Crss 0 1 10 100 0 0 40 80 120 160 200 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.0 T J = 175°C 10.0 1000 100 100µsec 1msec 1.0 T J = 25°C VGS = 0V 0.0 0.4 0.8 1.2 1.6 2.0 10 Tc = 25°C Tj = 175°C Single Pulse 1 1 10 10msec 0.1 100 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1503S/LPbF 200 2.0 I D = 240A LIMITED BY PACKAGE 160 RDS(on) , Drain-to-Source On Resistance 1.5 ID , Drain Current (A) 120 (Normalized) 1.0 80 0.5 40 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) TJ, Junction Temperature (° C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 (Z thJC ) D = 0.50 0.20 Thermal Response 0.1 0.10 P DM 0.05 t1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC +T C 1 0.01 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1503S/LPbF EAS , Single Pulse Avalanche Energy (mJ) 15V 1400 1200 1000 800 600 400 200 0 25 50 75 100 125 150 175 VDS L DRIVER RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 4.0 3.0 Charge ID = 250µA Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF1503S/LPbF 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 50% Duty Cycle ID = 140A 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1503S/LPbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1503S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASS E MBL ED ON WW 02, 2000 IN T HE AS S E MBLY L INE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RECT IF IE R LOGO AS S EMB LY LOT CODE PART NUMBE R F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L OR INT ERNAT IONAL RE CT IF IER LOGO AS S E MBLY LOT CODE PAR T NUMBER F530S DAT E CODE P = DE S IGNAT ES LEAD-F REE PRODU CT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S ITE CODE www.irf.com 9 IRF1503S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY L OT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RE CTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DE S IGNAT ES L EAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S E MBL Y S IT E CODE 10 www.irf.com IRF1503S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 www.irf.com 11