IRF2907ZL

PD - 95872 AUTOMOTIVE MOSFET IRF2907Z IRF2907ZS IRF2907ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A TO-220AB IRF2907Z D2Pak IRF2907ZS TO-262 IRF2907ZL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 170 120 75 680 330 2.2 ± 20 300 690 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case k Parameter Typ. ––– 0.50 Max. 0.45 ––– 62 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient k Junction-to-Ambient (PCB Mount, steady state) jk ––– ––– HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 06/17/04 IRF2907Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 75 ––– ––– 2.0 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.069 3.5 ––– ––– ––– ––– ––– ––– 180 46 65 19 140 97 100 5.0 13 7500 970 510 3640 650 1020 ––– ––– 4.5 4.0 ––– 20 250 200 -200 270 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 75A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V ID = 75A nC VDS = 60V VGS = 10V ns VDD = 38V ID = 75A RG = 2.5Ω VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from package G Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 41 59 75 A 680 1.3 61 89 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 38V di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f S Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.11mH, RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population. 100% tested to this value in production. ˆ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRF2907Z/S/L 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 1000 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 100 4.5V 10 4.5V ≤60µs PULSE WIDTH 1 0.1 1 Tj = 25°C 10 100 0.1 1 10 ≤60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 Gfs, Forward Transconductance (S) 200 T J = 25°C 150 ID, Drain-to-Source Current (Α ) 100 T J = 175°C 10 T J = 25°C 100 T J = 175°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 2 4 6 8 10 50 V DS = 10V 380µs PULSE WIDTH 0 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRF2907Z/S/L 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12.0 ID= 90A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 60V VDS= 38V VDS= 15V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec 10 TJ = 25°C VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 0.1 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF2907Z/S/L 180 160 140 ID, Drain Current (A) 2.5 Limited By Package RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 90A VGS = 10V 2.0 120 100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ 0.01 τJ Ri (°C/W) τi (sec) 0.251 0.000457 0.199 0.003019 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2907Z/S/L 1200 EAS , Single Pulse Avalanche Energy (mJ) 15V 1000 VDS L DRIVER ID TOP 10A 14A BOTTOM 75A 800 RG VGS 20V D.U.T IAS tp + V - DD A 600 0.01Ω 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG VGS(th) Gate threshold Voltage (V) 3.5 QGD 4.0 Charge 3.0 Fig 13a. Basic Gate Charge Waveform 2.5 ID = 250µA 2.0 1.5 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRF2907Z/S/L 100 Duty Cycle = Single Pulse 0.01 Avalanche Current (A) 0.05 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.10 1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 350 300 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRF2907Z/S/L D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF2907Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET GATE 1- LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 14.09 (.555) 13.47 (.530) 2 1- GATE- DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 www.irf.com 9 IRF2907Z/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr ƒ‚†v‡v‚Ãvqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG www.irf.com 10 IRF2907Z/S/L 2- COLLECTOR S @ 7 H V I à U S 6 Q 3- EMITTER 1- GATE @ 9 P 8 à @ U 6 9 & ( ( à 2 à & à S 6 @ ` IGBT ( à F @ @ X 8 à @ DI G TO-262 Part Marking Information G 6 I DP U 6 I S @ U DI S D@ DA U 8 @ S P B P G ` G 7 H @ T T 6 @ 9 P 8 à U P G Dimensions are shown in millimeters (inches) TO-262 Package Outline www.irf.com G "  " G DS à I 6 à T D à DT C U ) @ G Q H 6 Y @ ( ' & à @ 9 P 8 à U P G & ( ( à  ( à X X à I P à 9 @ G 7 H @ T T 6 Å 8 Å Ã @ DI G à ` G 7 H @ T T 6 à @ C U à DI 11 IRF2907Z/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 12 www.irf.com