IRF3000PBF

PD- 95255 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF3000PbF HEXFET® Power MOSFET RDS(on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 1.6 1.3 13 2.5 0.02 ± 30 8.9 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 09/20/04 IRF3000PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 300 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.38 0.34 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 0.40 Ω VGS = 10V, ID = 0.96A ƒ 5.0 V VDS = VGS, ID = 250µA 25 VDS = 300V, VGS = 0V µA 250 VDS = 240V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 4.7 11 8.2 7.2 23 23 730 100 20 940 39 87 Max. Units Conditions ––– S VDS = 50V, ID = 0.96A 33 ID = 0.96A 7.1 nC VDS = 240V 17 VGS = 10V, ––– VDD = 150V ––– ID = 0.96A ns ––– RG = 2.2Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 240V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 240V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 47 1.9 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 86 250 1.6 A 13 1.5 130 380 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 0.96A, VGS = 0V TJ = 25°C, IF = 0.96A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF3000PbF 100 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 1 5.5V 1 5.5V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.5 I D = 1.6A ID, Drain-to-Source Current ( A) 2.0 10.0 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 T J = 25°C 1.0 0.5 0.1 5.0 6.0 VDS = 50V 20µs PULSE WIDTH 7.0 8.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3000PbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd 20 VGS , Gate-to-Source Voltage (V) C ds ID= 0.96A 16 VDS= 240V VDS= 150V VDS= 60V 10000 C, Capacitance (pF) 1000 12 Ciss 100 8 Coss Crss 10 4 FOR TEST CIRCUIT SEE FIGURE 14 0 1 1 10 100 1000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10.0 TJ = 150°C 10 100µsec 1 1msec 10msec 100 1000 10000 1.0 T J = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3000PbF 2.0 VDS 1.6 RD VGS RG D.U.T. + I D , Drain Current (A) -V DD 1.2 10V 0.8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.4 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 (Z thJA ) 10 0.20 0.10 0.05 Thermal Response 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100 0.1 J = P DM x Z thJA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF3000PbF RDS (on) , Drain-to-Source On Resistance ( Ω) 0.50 RDS(on) , Drain-to -Source On Resistance ( Ω) 0.80 0.70 0.46 0.60 0.42 VGS = 10V 0.38 0.50 ID = 0.96A 0.40 0.34 0 2 4 6 8 10 12 14 ID , Drain Current (A) 0.30 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 100 VG ID TOP Charge VGS 3mA 80 Current Sampling Resistors EAS , Single Pulse Avalanche Energy (mJ) IG ID BOTTOM 0.9A 1.5A 1.9A Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 60 40 15V V(BR)DSS tp VDS L 20 DRIVER RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01Ω Starting T , Junction Temperature J ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF3000PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] y K x 45° 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING T O A S UBST RATE. 3X 1.27 [.050] 6.46 [.255] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF3000PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 26mH R G = 25Ω, IAS = 1.9A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. † ISD ≤ 0.96A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, T J ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com