IRF3704SPBF

PD - 95527 SMPS MOSFET l Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3704PbF IRF3704SPbF IRF3704LPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.0mΩ ID 77A… Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) Fully Characterized Avalanche Voltage and Current TO-220AB IRF3704 D2Pak IRF3704S TO-262 IRF3704L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 77 … 64 308 87 61 0.59 -55 to + 175 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)* Typ. ––– 0.50 ––– ––– Max. 1.73 ––– 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 10 www.irf.com 1 7/20/04 IRF3704/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.021 6.3 9.8 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 9.0 VGS = 10V, ID = 15A ƒ mΩ 13.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 8.1 6.4 16 8.4 98 12 5.0 1996 1085 155 Max. Units Conditions ––– S VDS = 10V, ID = 57A ––– ID = 28.4A ––– nC VDS = 10V ––– VGS = 4.5V ƒ 24 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 28.4A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 216 71 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 77… 308 1.3 ––– 57 68 62 75 V ns nC ns nC A VSD trr Qrr trr Qrr ––– 0.88 ––– 0.82 ––– 38 ––– 45 ––– 41 ––– 50 Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = 35.5A, VGS = 0V ƒ TJ = 125°C, IS = 35.5A, VGS = 0V ƒ TJ = 25°C, IF = 35.5A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 35.5A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRF3704/S/LPbF 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 1000 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 3.5V 10 3.5V 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 20µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 77A I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 1.5 1.0 0.5 10 3.0 V DS = 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3704/S/LPbF 3000 2500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 28.4A VDS = 10V 8 C, Capacitance (pF) 2000 Ciss 6 1500 Coss 1000 4 500 2 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us TJ = 175 ° C I D , Drain Current (A) 100 100 100us 10 TJ = 25 ° C 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 2.0 1 0.1 TC = 25 ° C TJ = 175° C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3704/S/LPbF 90 VDS LIMITED BY PACKAGE RD 75 VGS RG 10V D.U.T. + ID , Drain Current (A) -VDD 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 45 30 Fig 10a. Switching Time Test Circuit VDS 90% 15 0 25 50 TC , Case Temperature ( °C) 75 100 125 150 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF3704/S/LPbF RDS ( on ) , Drain-to-Source On Resistance ( Ω ) VGS = 4.5V 0.015 RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.020 0.010 0.009 0.008 ID = 35.5A 0.007 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD EAS , Single Pulse Avalanche Energy (mJ) VG 600 VGS 3mA Charge IG ID 500 ID 11.6A 23.8A BOTTOM 28.4A TOP Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 400 300 200 15V V(BR)DSS tp VDS L DRIVER 100 RG 20V D.U.T IAS tp + - VDD 0 A 25 I AS 0.01Ω Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 175 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF3704/S/LPbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com 7 IRF3704/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" IN T E R N AT IO N AL R E CT IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 53 0 S D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E 8 www.irf.com IRF3704/S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE www.irf.com 9 IRF3704/S/LPbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. RG = 25Ω, IAS = 28.4 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package … Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‚ Starting TJ = 25°C, L = 0.5 mH Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/