IRF3709S

PD - 94071 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG IRF3709 IRF3709S IRF3709L HEXFET® Power MOSFET VDSS 30V RDS(on) max 9.0mΩ ID 90A† TO-220AB IRF3709 D2Pak IRF3709S TO-262 IRF3709L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 20 90† 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 02/20/01 IRF3709/3709S/3709L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.029 6.4 7.4 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 9.0 VGS = 10V, ID = 15A ƒ mΩ 10.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 53 ––– ––– S VDS = 15V, ID = 30A ––– 27 41 ID = 15A ––– 6.7 ––– nC VDS = 16V ––– 9.7 ––– VGS = 5.0V ƒ ––– 22 ––– VGS = 0V, VDS = 10V ––– 11 ––– VDD = 15V ––– 171 ––– ID = 30A ns ––– 21 ––– RG = 1.8Ω ––– 9.2 ––– VGS = 4.5V ƒ ––– 2672 ––– VGS = 0V ––– 1064 ––– pF VDS = 16V ––– 109 ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy ‚ Avalanche Current Typ. ––– ––– Max. 382 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.88 0.82 48 46 48 52 90† A 360 1.3 ––– 72 69 72 78 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V ƒ TJ = 125°C, IS = 30A, VGS = 0V ƒ TJ = 25°C, IF = 30A, VR=15V di/dt = 100A/µs ƒ TJ = 125°C, IF = 30A, VR=15V di/dt = 100A/µs ƒ 2 www.irf.com IRF3709/3709S/3709L 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 100  VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 2.7V 2.7V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 90A I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 100 1.0 0.5 10 2.0 V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3709/3709S/3709L 4000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 3000  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6 ID = 30A 5 V DS= 24V V DS= 15V V DS= 6V Ciss 4 2000 3 1000 Coss 2 1 0 1 Crss 10 100 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C ID , Drain Current (A) 100 1000 10us 10 100 100us 1ms TJ = 25 ° C 1 10 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 °C TJ = 150 °C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3709/3709S/3709L 100 VDS LIMITED BY PACKAGE RD VGS 80 D.U.T. + RG I D , Drain Current (A) -VDD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.001 0.01 0.1  PDM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3709/3709S/3709L EAS , Single Pulse Avalanche Energy (mJ) 1200 15 V 1000 VDS L D R IV E R  TOP BOTTOM ID 13A 19A 30A 800 RG 20V D .U .T IA S tp 0.0 1 Ω + - VD D A 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF3709/3709S/3709L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF3709/3709S/3709L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 ( .1 1 3 ) 2 .6 2 ( .1 0 3 ) 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 4 ( .1 3 9 ) -A6 .4 7 ( .2 5 5 ) 6 .1 0 ( .2 4 0 ) -B4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) 1 .3 2 ( .05 2 ) 1 .2 2 ( .04 8 ) 4 1 5 .2 4 ( .6 0 0 ) 1 4 .8 4 ( .5 8 4 ) 1 .1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN 1 4 .0 9 ( .5 5 5 ) 1 3 .4 7 ( .5 3 0 ) 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 3X 1 .4 0 ( .0 5 5 ) 3X 1 .1 5 ( .0 4 5 ) 2 .5 4 ( .1 0 0 ) 2X N O TE S : 0 .93 ( .0 3 7 ) 0 .69 ( .0 2 7 ) M B AM 3X 0.5 5 ( .0 2 2 ) 0.4 6 ( .0 1 8 ) 0 .3 6 ( .0 1 4 ) 2 .9 2 ( .11 5 ) 2 .6 4 ( .10 4 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK 8 www.irf.com IRF3709/3709S/3709L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com 9 IRF3709/3709S/3709L TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com IRF3709/3709S/3709L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. 6 0.0 0 (2.36 2) M IN . N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 0.85mH RG = 25Ω, IAS = 30A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01 www.irf.com 11