IRF3711SPBF

PD- 94948 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free l IRF3711PbF IRF3711SPbF IRF3711LPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.0mΩ ID 110A† Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) at 4.5V VGS TO-220AB IRF3711PbF D2Pak IRF3711SPbF TO-262 IRF3711LPbF Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Fully Characterized Avalanche Voltage and Current Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 110† 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 2/27/04 IRF3711/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 4.7 6.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 6.0 VGS = 10V, ID = 15A ƒ mΩ 8.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions ––– S VDS = 16V, ID = 30A 44 ID = 15A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 30A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– 110† ––– 440 1.3 ––– 75 92 72 98 V ns nC ns nC A VSD trr Qrr trr Qrr ––– 0.88 ––– 0.82 ––– 50 ––– 61 ––– 48 ––– 65 2 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V ƒ TJ = 125°C, IS = 30A, VGS = 0V ƒ TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ www.irf.com IRF3711/S/LPbF 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 10 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 TJ = 25 ° C TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 110A I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 2.0 V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3711/S/LPbF 100000 14 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 30A 12 10 8 6 4 2 0 VDS = 16V VDS = 10V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150 ° C ID, Drain-to-Source Current (A) 1000 10 100 100µsec 1msec TJ = 25 ° C 1 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 VSD,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3711/S/LPbF 120 LIMITED BY PACKAGE 100 V DS VGS RG RD D.U.T. + ID , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3711/S/LPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 1400 1200 1000 800 600 400 200 0 TOP BOTTOM VDS L DRIVER ID 13A 19A 30A RG 20V D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF3711/S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF3711/S/LPbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 8 www.irf.com IRF3711/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com 9 IRF3711/S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE 10 www.irf.com IRF3711/S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 30A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/04 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/