IRF3711Z

PD - 94757A IRF3711Z IRF3711ZS IRF3711ZL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 20V 6.0m: Qg 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3711Z D2Pak IRF3711ZS TO-262 IRF3711ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 92 65 Units V A ™ h h 380 79 40 0.53 -55 to + 175 W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw f 300 (1.6mm from case) 10 lbf in (1.1N m) y y Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case i Typ. Max. 1.89 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient fià f ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount) gi Notes  through ‡ are on page 12 www.irf.com 1 10/30/03 IRF3711Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 20 ––– ––– ––– 1.55 ––– ––– ––– ––– ––– 46 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.013 4.8 5.9 2.0 -5.6 ––– ––– ––– ––– ––– 16 4.6 1.4 5.3 4.7 6.7 9.5 12 16 15 5.4 2150 680 320 ––– ––– 6.0 7.3 2.45 ––– 1.0 150 100 -100 ––– 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 12A Clamped Inductive Load e ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 130 12 7.9 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 16 6.0 Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 92 h Conditions MOSFET symbol D A 380 1.0 24 9.0 V ns nC Ù showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs e e 2 www.irf.com IRF3711Z/S/L 1000 1000 VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 3.0V 10 3.0V 10 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) T J = 25°C T J = 175°C ID = 30A VGS = 10V 100 1.5 10 (Normalized) 1.0 VDS = 10V 60µs PULSE WIDTH 1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF3711Z/S/L 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12 ID= 12A VGS, Gate-to-Source Voltage (V) 10 8 6 4 2 0 VDS= 15V VDS= 10V C, Capacitance (pF) Ciss 1000 Coss Crss 100 1 10 100 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.0 T J = 175°C 10.0 1000 100 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 1msec 10msec 100 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3711Z/S/L 100 LIMITED BY PACKAGE 80 ID , Drain Current (A) 2.4 VGS(th) Gate threshold Voltage (V) 2.0 60 1.6 ID = 250µA 40 1.2 20 0.8 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.894 0.000306 0.600 0.401 0.001019 0.006662 τ1 τ2 0.01 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3711Z/S/L RDS(on), Drain-to -Source On Resistance ( Ω) 0.02 600 EAS, Single Pulse Avalanche Energy (mJ) ID = 15A 500 ID 7.3A 8.6A BOTTOM 12A TOP 400 0.01 T J = 125°C 300 200 T J = 25°C 0.00 2.0 4.0 6.0 8.0 10.0 100 0 25 50 75 100 125 150 175 VGS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy vs. Drain Current LD VDS 15V VDS L DRIVER + VDD - RG VGS 20V D.U.T IAS tp + V - DD D.U.T A VGS Pulse Width < 1µs Duty Factor < 0.1% 0.01Ω Fig 13a. Unclamped Inductive Test Circuit Fig 14a. Switching Time Test Circuit V(BR)DSS tp VDS 90% 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms 6 www.irf.com IRF3711Z/S/L D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform www.irf.com 7 IRF3711Z/S/L Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by; * P =P loss conduction + P drive + P output P = Irms × Rds(on) loss + (Qg × Vg × f ) ( 2 ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; Q  +  oss × Vin × f + (Qrr × Vin × f )  2 *dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2   Qgs 2 Qgd +I× × Vin × f  +  I × × Vin × ig ig   + (Qg × Vg × f ) +  Qoss × Vin × f  2   f  This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRF3711Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: T HIS IS AN IRF1010 L OT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE PART NUMBER DAT E CODE www.irf.com 9 D2Pak Package Outline Dimensions are shown in millimeters (inches) IRF3711Z/S/L D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L PART NUMBER F530S DAT E CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 www.irf.com IRF3711Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 11 IRF3711Z/S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.8mH, RG = 25Ω, IAS = 12A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB pakcage. … This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‡ Rθ is measured at TJ approximately 90°C TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 12 www.irf.com