IRF4905L

PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF4905L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ -10V… Continuous Drain Current, V GS @ -10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -74 -52 -260 3.8 200 1.3 ± 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 0.75 40 Units °C/W 8/25/97 IRF4905S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 ––– ––– -2.0 21 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 18 99 61 96 7.5 3400 1400 640 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA… 0.02 Ω VGS = -10V, ID = -38A „ -4.0 V VDS = VGS, I D = -250µA ––– S VDS = -25V, ID = -38A… -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 VGS = -10V, See Fig. 6 and 13 „… ––– VDD = -28V ––– ID = -38A ns ––– RG = 2.5Ω ––– RD = 0.72Ω, See Fig. 10 „ Between lead, nH ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -74 showing the A G integral reverse ––– ––– -260 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V „ ––– 89 130 ns TJ = 25°C, IF = -38A ––– 230 350 nC di/dt = -100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRF4905 data and test conditions ‚ Starting TJ = 25°C, L = 1.3mH RG = 25Ω , IAS = -38A. (See Figure 12) TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ƒ ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, IRF4905S/L 1000 V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 1000 -ID , D ra in -to -S o u rc e C u rre n t (A ) 100 -ID , D ra in -to -S o u rc e C u rre n t (A ) V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 100 10 - 4.5 V 10 -4.5 V 1 0.1 1 2 0µ s PU LS E W ID TH TJ = 2 5°C T c = 25°C A 10 100 1 0.1 1 2 0 µ s PU LSE W ID TH TJ 1 75°C TC = 175°C 10 100 A -VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = - 64 A -I D , D rain -to- S our ce C urr ent ( A ) TJ = 2 5 °C 100 1.5 TJ = 1 7 5 °C 1.0 10 0.5 1 4 5 6 7 V DS = - 2 5 V 2 0 µ s P U L S E W ID T H 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = - 10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF4905S/L 7000 20 6000 -V G S , G a te -to -S o u rc e V o lta g e (V ) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d I D = - 3 8A VDS = - 44V VDS = - 28V 16 C , C a p a c ita n c e (p F ) 5000 C is s 4000 12 C o ss 3000 8 2000 C rs s 4 1000 0 1 10 100 A 0 0 40 80 F OR TE ST C IR C U IT SE E FIG U R E 1 3 120 160 A 200 -VD S , Drain-to-Source V oltage (V) Q G , Total G ate C harge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -IS D , R e ve rse D ra in C u rre n t (A ) O PE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) 100 -I D , D ra in C u rre n t (A ) 100 100µ s T J = 17 5°C T J = 25 °C 10 1m s 10 10m s 1 0.4 0.6 0.8 1.0 1.2 1.4 VG S = 0 V 1.6 A 1 1 T C = 2 5°C T J = 1 75°C Sin gle Pu lse 10 100 1.8 A -VS D , S ource-to-Drain V oltage (V ) -VD S , Drain-to-Source V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF4905S/L 80 VDS VGS I D , Drain Current (A) 60 RD D.U.T. + 40 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0.50 0.20 Thermal Response 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG V DD IRF4905S/L 2500 VDS L E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) TO P 2000 BOT TO M ID -1 6A - 27A -38 A RG D .U .T IA S D R IV E R 0.01 Ω VD D A - 20V tp 1500 1000 15V 500 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 A 175 I AS Starting TJ , Junction T emperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V .3µF VDS IRF4905S/L Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF4905S/L D2Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS. LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO AS SEMBLY LOT CODE A PART NU MBER F53 0S 9246 9B 1M DATE CODE (YYW W ) YY = YEAR W W = W EE K IRF4905S/L Package Outline TO-262 Outline Part Marking Information TO-262 IRF4905S/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1) TR L 1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) FE E D D IR E C TIO N 1 3.5 0 (. 532 ) 1 2.8 0 (. 504 ) 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4 33 0.0 0 (14. 17 3) M AX . 6 0.0 0 (2 .36 2) M IN . N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E. 26 .40 (1. 03 9) 24 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97