IRF520NPBF

PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.20Ω G S ID = 9.7A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 9.7 6.8 38 48 0.32 ± 20 91 5.7 4.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 3.1 ––– 62 Units °C/W 11/5/03 IRF520NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 ––– ––– 2.0 2.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.5 23 32 23 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.20 Ω VGS = 10V, ID = 5.7A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 5.7A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 25 ID = 5.7A 4.8 nC VDS = 80V 11 VGS = 10V, See Fig. 6 and 13 ––– VDD = 50V ––– ID = 5.7A ns ––– RG = 22Ω ––– RD = 8.6Ω, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 330 ––– VGS = 0V 92 ––– pF VDS = 25V 54 ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 99 390 9.7 A 38 1.3 150 580 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 5.7A, VGS = 0V TJ = 25°C, IF = 5.7A di/dt = 100A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25°C, L = 4.7mH RG = 25Ω, IAS = 5.7A. (See Figure 12) ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF520NPbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4.5V 20µs PULSE WIDTH TC = 175°C 1 10 100 4.5V 1 0.1 20µs PULSE WIDTH TC = 25°C 1 10 A 100 1 0.1 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 9.5A I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25°C 10 TJ = 175°C 1.5 1.0 0.5 1 4 5 6 7 V DS= 50V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF520NPbF 600 500 Ciss 400 300 Coss V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 5.7A 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 12 8 200 Crss 100 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 13 15 20 25 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs I D , Drain Current (A) 10 100µs TJ = 175°C 10 TJ = 25°C 1ms 1 10ms 1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 0.1 1 TC = 25°C TJ = 175°C Single Pulse 10 100 1000 A VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF520NPbF VDS 10.0 RD VGS RG D.U.T. + 8.0 - VDD ID , Drain Current (A) 10V 6.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit VDS 90% 2.0 0.0 25 50 TC , Case Temperature ( °C) 75 100 125 150 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF520NPbF EAS , Single Pulse Avalanche Energy (mJ) VDS L 200 D.U.T. RG + V - DD TOP 160 BOTTOM ID 2.3A 4.0A 5.7A 10 V IAS tp 0.01Ω 120 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 80 40 0 VDD = 25V 25 50 75 100 125 150 175 A Starting TJ , Junction Temperature (°C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRF520NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRF520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIO NAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/