IRF5210SPBF

PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF5210SPbF G D TO-262 IRF5210LPbF S Gate Drain Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Max. -38 -24 -140 3.1 170 1.3 ± 20 120 -23 0.017 -7.4 -55 to + 150 300 (1.6mm from case ) Units A c W W/°C V mJ A mJ V/ns °C c Peak Diode Recovery dv/dt e Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Single Pulse Avalanche Energy Avalanche Current c d Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount, steady state) Typ. Max. 0.75 40 Units °C/W g ––– ––– www.irf.com 1 05/22/06 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units -100 ––– ––– -2.0 9.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– -0.11 ––– ––– ––– ––– ––– ––– ––– 150 22 81 14 63 72 55 4.5 7.5 2780 800 430 ––– ––– 60 -4.0 ––– -50 -250 100 -100 230 33 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF Conditions V VGS = 0V, ID = -250µA V/°C Reference to 25°C, ID = -1mA mΩ VGS = 10V, ID = -38A V VDS = VGS, ID = -250µA S VDS = -50V, ID = -23A µA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = -23A VDS = -80V VGS = -10V ns VDD = -50V ID = -23A RG = 2.4Ω VGS = -10V nH Between lead, f f f 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 170 1180 -38 A -140 -1.6 260 1770 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -23A, VGS = 0V TJ = 25°C, IF = -23A, VDD = -25V di/dt = -100A/µs Ù Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) ‚ Starting TJ = 25°C, L = 0.46mH RG = 25Ω, IAS = -23A. (See Figure 12) ƒ ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF5210S/LPbF 1000 TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 1000 TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -ID, Drain-to-Source Current (A) 100 BOTTOM -ID, Drain-to-Source Current (A) 100 BOTTOM 10 -4.5V 1 10 -4.5V 1 ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) ≤60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -38A -I D, Drain-to-Source Current (A) 100 T J = 25°C T J = 150°C VGS = -10V 1.5 10 1.0 1 VDS = -50V ≤60µs PULSE WIDTH 0.1 2 4 6 8 10 12 14 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF5210S/LPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED 12.0 ID= -23A -V GS, Gate-to-Source Voltage (V) C rss = C gd 10.0 8.0 6.0 4.0 2.0 0.0 C oss = C ds + C gd VDS= -80V VDS= -50V VDS= -20V C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 25 50 75 100 125 150 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100µsec 1msec 10msec 100 1000 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5210S/LPbF VDS 40 35 -I D, Drain Current (A) RD V GS RG D.U.T. + 30 25 20 15 10 5 0 25 50 75 100 125 150 90% VDS td(on) tr t d(off) tf -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VGS 10% T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τC τ1 τ2 τ3 τ3 τ Ri (°C/W) τι (sec) 0.128309 0.000069 0.377663 0.001772 0.244513 0.010024 0.01 Ci= τ i/Ri Ci= τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - VDD 5 IRF5210S/LPbF VDS L 500 EAS , Single Pulse Avalanche Energy (mJ) RG D.U.T IAS -20V DRIVER 0.01Ω VDD A 450 400 350 300 250 200 150 100 50 0 25 50 75 tp ID -8.7A -14A BOTTOM -23A TOP 15V Fig 12a. Unclamped Inductive Test Circuit I AS 100 125 150 Starting T J , Junction Temperature (°C) tp V(BR)DSS Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -10V QGS VG QG QGD 50KΩ 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5210S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG V GS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + -V DD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Inductor Curent [ VDD ] Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For P-Channel HEXFETS www.irf.com 7 D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) IRF5210S/LPbF D2Pak (TO-263AB) Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ 8 Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com IRF5210S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSG" "G GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃ&Ã2à ((& X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com 9 IRF5210S/LPbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/06 10 www.irf.com