IRF540NS

PD - 91342 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l HEXFET® Power MOSFET D IRF540NS IRF540NL VDSS = 100V RDS(on) = 44mΩ G S Advanced HEXFET P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications. ID = 33A D2 Pak IRF540NS TO-262 IRF540NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ‡ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 33 23 110 130 0.87 ± 20 16 13 7.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Typ. ––– ––– Max. 1.15 40 Units °C/W www.irf.com 1 02/14/02 IRF540NS/IRF540NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚‡ Min. Typ. Max. Units Conditions 100 ––– ––– V VGS = 0V, ID = 250µA ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA ‡ ––– ––– 44 mΩ VGS = 10V, ID = 16A „ 2.0 ––– 4.0 V VDS = VGS , ID = 250µA 21 ––– ––– S VDS = 50V, ID = 16A„‡ ––– ––– 25 VDS = 100V, VGS = 0V µA ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 71 ID = 16A ––– ––– 14 nC VDS = 80V ––– ––– 21 VGS = 10V, See Fig. 6 and 13 „‡ ––– 11 ––– VDD = 50V ––– 35 ––– ID = 16A ns ––– 39 ––– RG = 5.1Ω ––– 35 ––– VGS = 10V, See Fig. 10 „‡ D Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact S ––– 1960 ––– VGS = 0V ––– 250 ––– VDS = 25V ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 ‡ ––– 700… 185† mJ IAS = 16A, L = 1.5mH Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ––– ––– showing the A G integral reverse ––– ––– 110 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V „ ––– 115 170 ns TJ = 25°C, IF = 16A ––– 505 760 nC di/dt = 100A/µs „‡ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L =1.5mH RG = 25Ω, IAS = 16A. (See Figure 12) ƒ ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Uses IRF540N data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRF540NS/IRF540NL 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 10 4.5V 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH  T = 175 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 ID = 33A  R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 2.5 TJ = 25 ° C  TJ = 175 ° C  2.0 1.5 100 1.0 10 4.0  V DS = 50V 20µs PULSE WIDTH 7.0 8.0 5.0 6.0 9.0 0.5 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF540NS/IRF540NL 3000 2500 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 16A  16 C, Capacitance (pF) 2000 Ciss   V DS = 80V V DS = 50V V DS = 20V 12 1500 8 1000 C oss 500 4 C rss 0 1 10 100 0 0 20  FOR TEST CIRCUIT SEE FIGURE 13 60 40 80 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 175 ° C  10 ID, Drain-to-Source Current (A) 100 10 100µsec 1msec TJ = 25 ° C  1 1 T A = 25°C T J = 175°C Single Pulse 10msec 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF540NS/IRF540NL 35 VDS 30 RD VGS RG D.U.T. + I D , Drain Current (A) 25 -VDD 20 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 10 5 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF540NS/IRF540NL 400 1 5V EAS , Single Pulse Avalanche Energy (mJ) VD S L D R IV E R 300  ID 6.5A 11.3A BOTTOM 16A TOP RG 20V D .U .T IA S tp 0 .01 Ω + - VD D A 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF540NS/IRF540NL Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF540NS/IRF540NL D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRF540NS/IRF540NL TO-262 Package Outline TO-262 Part Marking Information www.irf.com 9 IRF540NS/IRF540NL D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. 6 0.0 0 (2.36 2) M IN . N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02 10 www.irf.com