IRF5800

PD - 93850 IRF5800 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.0 -3.2 -32 2.0 1.3 0.016 20.6 ± 20 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 2/8/00 IRF5800 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 3.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 ––– ––– ––– ––– ––– ––– ––– ––– 11.4 2.3 2.2 11.4 11 24 14 535 94 68 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = 1mA 0.085 VGS = -10V, ID = -4.0A ‚ Ω 0.150 VGS = -4.5V, ID = -3.0A ‚ ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -4.0A -1.0 VDS = -24V, VGS = 0V µA -5.0 VDS = -24V, VGS = 0V, T J = 70°C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -4.0A ––– nC VDS = -16V ––– VGS = -10V ‚ 17 VDD = -15V, VGS = -10V 17 ID = -1.0A ns 36 RG = 6.0Ω 20 RD = 15Ω, ‚ ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 19 16 -2.0 A -32 -1.2 28 24 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, I F = -2.0A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. „ Starting TJ = 25°C, L = 2.5mH RG = 25Ω, I AS = -4.0A. (See Fig 10 ) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRF5800 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) 10 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1 1 -2.70V 0.1 -2.70V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -4.0A TJ = 25 ° C TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 10 1.0 1 0.5 0.1 2.0 V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5800 800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0A VDS = -16V 600 16 C, Capacitance (pF) Ciss 12 400 8 200 Coss Crss 0 1 10 100 4 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 TJ = 150 ° C -I D , Drain Current (A) I 10us 10 100us 1ms 1 10ms 1 TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 0.1 1 TC = 25 °C TJ = 150 °C Single Pulse 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5800 4.0 50 EAS , Single Pulse Avalanche Energy (mJ) 40 3.0 ID -1.8A -2.5A BOTTOM -4.0A TOP -I D , Drain Current (A) 30 2.0 20 1.0 10 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Starting T J, Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 PDM t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5800 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS (on) , Drain-to-Source On Resistance ( Ω ) 0.20 0.25 0.20 VGS = -4.5V 0.15 0.16 0.12 ID = -4.0A 0.08 0.10 0.05 VGS = -10V 0.00 0 5 10 15 20 -I D , Drain Current (A) 0.04 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRF5800 TSOP-6 Package Outline TSOP-6 Part Marking Information www.irf.com 7 IRF5800 TSOP-6 Tape & Reel Information WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 8 www.irf.com