IRF5800PBF

PD - 96029 IRF5800PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.0 -3.2 -32 2.0 1.3 0.016 20.6 ± 20 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 08/31/05 IRF5800PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 3.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 ––– ––– ––– ––– ––– ––– ––– ––– 11.4 2.3 2.2 11.4 11 24 14 535 94 68 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = 1mA 0.085 VGS = -10V, ID = -4.0A ‚ Ω 0.150 VGS = -4.5V, ID = -3.0A ‚ ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -4.0A -1.0 VDS = -24V, VGS = 0V µA -5.0 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -4.0A ––– nC VDS = -16V ––– VGS = -10V ‚ 17 VDD = -15V, VGS = -10V 17 ID = -1.0A ns 36 RG = 6.0Ω 20 RD = 15Ω, ‚ ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 19 16 -2.0 A -32 -1.2 28 24 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, I F = -2.0A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. „ Starting TJ = 25°C, L = 2.5mH R G = 25Ω, I AS = -4.0A. (See Fig 10 ) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRF5800PbF 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) 10 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1 1 -2.70V 0.1 -2.70V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 ° C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.0A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 1.0 1 0.5 0.1 2.0 V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5800PbF 800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0A VDS = -16V C, Capacitance (pF) 600 16 Ciss 12 400 8 200 Coss Crss 0 1 10 100 4 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 ° C -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms 1 TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5800PbF EAS , Single Pulse Avalanche Energy (mJ) 4.0 50 40 -ID , Drain Current (A) 3.0 ID -1.8A -2.5A BOTTOM -4.0A TOP 30 2.0 20 1.0 10 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Starting TJ, Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5800PbF 0.20 RDS (on) , Drain-to-Source On Resistance ( Ω ) RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.25 0.20 VGS = -4.5V 0.15 0.16 0.12 ID = -4.0A 0.08 0.10 0.05 VGS = -10V 0.00 0 5 10 15 20 -I D , Drain Current (A) 0.04 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRF5800PbF TSOP-6 Package Outline TSOP-6 Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR DATE CODE Y = YEAR W = WEEK 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D PART NUMBER TOP LOT CODE PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF 5852 F = IRF 5801 I = IRF5805 J = IRF 5806 K = IRF5810 L = IRF5804 M = IRF 5803 N = IRF5802 Note: A line above the work week (as s hown here) indicates Lead-Free. 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 X Y www.irf.com 7 IRF5800PbF TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 8 www.irf.com