IRF5801

PD-94044 SMPS MOSFET Applications l High frequency DC-DC converters IRF5801 HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2Ω ID 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D 1 6 A D D 2 5 D G 3 4 S T op V iew TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Typ. ––– Max. 62.5 Units °C/W Notes  through † are on page 8 www.irf.com 1 01/17/01 IRF5801 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 2.2 Ω VGS = 10V, ID = 0.36A ƒ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units Conditions 0.44 ––– ––– S VDS = 50V, ID = 0.36A ––– 3.9 ––– ID = 0.36A ––– 0.8 ––– nC VDS = 160V ––– 2.2 ––– VGS = 10V ––– 6.5 ––– VDD = 100V ––– 8.0 ––– ID = 0.36A ns ––– 8.8 ––– RG = 53Ω ––– 19 ––– VGS = 10V ƒ ––– 88 ––– VGS = 0V ––– 18 ––– VDS = 25V ––– 6.3 ––– pF ƒ = 1.0MHz ––– 102 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– 8.4 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– 26 ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 9.9 0.6 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 45 54 1.8 A 4.8 1.3 ––– ––– V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 0.36A, VGS = 0V TJ = 25°C, I F = 0.36A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF5801 10 VGS 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 10 ID, Drain-to-Source Current (A) 1 ID, Drain-to-Source Current (A) 1 VGS 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 6.0V 6.0V 0.1 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 0.01 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 0.6A I D , Drain-to-Source Current (A) 2.5 TJ = 150° C 2.0 1 1.5 TJ = 25 ° C 1.0 0.5 0.1 6 7 8 9 V DS = 50V 20µs PULSE WIDTH 10 11 12 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5801 160 20 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 120 V GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = 0.36A 16 V DS= 160V V DS= 100V V DS= 40V Ciss 80 12 8 40 Coss Crss 4 0 1 10 100 1000 0 0 1 2 3 4 5 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10 TJ = 150 ° C 1 10us 1 100us 1ms 0.1 10ms TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 0.01 1 TC = 25 °C TJ = 150 °C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5801 0.6 VDS VGS RG RD 0.5 D.U.T. + ID , Drain Current (A) 0.4 -VDD 10V 0.3 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.2 Fig 10a. Switching Time Test Circuit VDS 90% 0.1 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.0001 0.001 0.01 0.1 1 10  PDM t1 t2 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5801 RDS ( on ) , Drain-to-Source On Resistance (Ω ) 10.000 ( RDS(on), Drain-to -Source On Resistance Ω ) 12.000 2.500 2.250 8.000 VGS = 10V 6.000 2.000 4.000 ID = 0.6A 1.750 2.000 0.000 0 1 2 3 4 5 ID , Drain Current ( A ) 1.500 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD VG EAS , Single Pulse Avalanche Energy (mJ) 25 VGS 3mA Charge IG ID 20  TOP BOTTOM ID 0.4A 0.7A 0.9A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15 10 15V 5 V (B R )D S S tp VD S L DRIVER 0 25 50 75 100 125 150 RG 20 V IAS tp D.U .T IA S 0.0 1 Ω + V - DD A Starting T J , Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF5801 TSOP-6 Package Outline TSOP-6 Part Marking Information www.irf.com 7 IRF5801 TSOP-6 Tape & Reel Information Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ When mounted on 1 inch square copper board, t < 10sec. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 27mH RG = 25Ω, IAS = 0.36A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 0.36A, di/dt ≤ 93A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 8 www.irf.com