IRF5810

PD -94198 IRF5810 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -20V RDS(on) max (mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -2.9 -2.3 -11 0.96 0.62 0.008 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 130 Units °C/W www.irf.com 1 6/6/01 IRF5810 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 ––– ––– ––– -0.45 5.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.011 60 87 ––– ––– ––– ––– ––– ––– 6.4 1.2 1.7 8.2 14 62 53 650 110 86 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 90 VGS = -4.5V, ID = -2.9 ‚ mΩ 135 VGS = -2.5V, ID = -2.3A ‚ -1.2 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -2.9A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, T J = 70°C -100 VGS = -12V nA 100 VGS = 12V 9.6 ID = -2.9A 1.8 nC VDS = -10V 2.6 VGS = -4.5V ––– VDD = -10V ‚ ––– ID = -1.0A ns ––– RG = 6.0Ω ––– VGS = -4.5V ––– VGS = 0V ––– pF VDS = -16V ––– ƒ = 1kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 110 130 -1.0 A -11 -1.2 170 200 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, IF = -1.0A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in square Cu board ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF5810 100 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 100 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 10 1 1 0.1 -1.2V -1.2V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.0 T J = 25°C 10.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -2.9A -I D, Drain-to-Source Current (Α ) 1.5 T J = 150°C 1.0 1.0 0.5 0.1 1.0 1.5 VDS = -15V 20µs PULSE WIDTH 2.0 2.5 3.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5810 1000 800 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -2.9A VDS = -16V VDS = -10V 8 C, Capacitance (pF) Ciss 600 6 400 4 200 Coss Crss 2 0 1 10 100 0 0 2 4 6 8 10 12 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS (on) -ISD , Reverse Drain Current (A) 10 -I D , Drain-to-Source Current (A) TJ = 150 ° C 10 100µsec 1 1 1msec Tc = 25°C Tj = 150°C Single Pulse 0 1 10 TJ = 25 ° C 10msec 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 -VSD ,Source-to-Drain Voltage (V) 100 -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5810 3.0 VDS 2.5 RD VGS RG D.U.T. + -ID , Drain Current (A) 2.0 1.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 VGS 10% TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF5810 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS (on) , Drain-to-Source On Resistance ( Ω ) 0.10 0.25 0.09 0.20 0.08 0.15 VGS = -2.5V 0.07 0.10 VGS = -4.5V 0.05 0.06 ID = -2.9A 0.05 0.04 2.0 4.0 6.0 8.0 10.0 0.00 0 2 4 6 8 10 -I D , Drain Current (A) -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5810 1.1 60 -VGS(th) Gate threshold Voltage (V) 1.0 0.9 50 40 0.8 0.7 0.6 0.5 0.4 -75 -50 -25 0 25 50 Power (W) ID = -250µA 30 20 10 0 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 T J , Temperature ( °C ) Time (sec) Fig 15. Threshold Voltage Vs. Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF5810 TSOP-6 Package Outline TSOP-6 Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y = YEAR W = WEEK PART NUMBER 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D T OP LOT CODE 24 25 26 X Y Z PART NUMBER CODE REFERENCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 W = (27-52) IF PRECEDED BY A LET T ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 X Y 8 www.irf.com IRF5810 TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01 www.irf.com 9