IRF5851

PD-93998A IRF5851 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge N-Ch G1 1 6 D1 P-Ch -20V S2 2 5 S1 VDSS 20V G2 3 4 D2 RDS(on) 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. N-Channel 20 2.7 2.2 11 0.96 0.62 7.7 ± 12 -55 to + 150 P-Channel -20 -2.2 -1.7 -9.0 Units A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient ƒ Typ. ––– Max. 130 Units °C/W www.irf.com 1 2/26/02 IRF5851 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 20 — — -20 — — — 0.016 — — -0.011 — — — 0.090 — — 0.120 — — 0.135 — — 0.220 0.60 — 1.25 -0.45 — -1.2 5.2 — — 3.5 — — — — 1.0 — — -1.0 — — 25 — — -25 –– — ±100 — 4.0 6.0 — 3.6 5.4 — 0.95 — — 0.66 — — 0.83 — — 5.7 — — 6.6 — — 8.3 — — 1.2 — — 14 — — 15 — — 31 — — 2.4 — — 28 — — 400 — — 320 — — 48 — — 56 — — 32 — — 40 — Units V V/°C Ω V S µA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 4.5V, ID = 2.7A ‚ VGS = 2.5V, ID = 2.2A ‚ VGS = -4.5V, ID = -2.2A ‚ VGS = -2.5V, ID = -1.7A ‚ VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 10V, ID = 2.7A ‚ VDS = -10V, ID = -2.2A ‚ VDS = 16 V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16 V, VGS = 0V, TJ = 70°C VDS = -16V, VGS = 0V, TJ = 70°C VGS = ± 12V N-Channel ID = 2.7A, VDS = 10V, VGS = 4.5V P-Channel ID = -2.2A, V DS = -10V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, R G = 6.2Ω, VGS = 4.5V P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, VGS = -4.5V N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ‚ ns ‚ pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 0.96 — — -0.96 A — — 11 — — -9.0 — — 1.2 TJ = 25°C, I S = 0.96A, VGS = 0V ‚ V — — -1.2 TJ = 25°C, I S = -0.96A, VGS = 0V ‚ — 25 38 N-Channel ns — 23 35 TJ = 25°C, IF = 0.96A, di/dt = 100A/µs — 6.5 9.8 nC P-Channel ‚ TJ = 25°C, IF = -0.96A, di/dt = -100A/µs — 7.7 12 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 & 26 ) ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. ƒ Surface mounted on FR-4 board, t ≤ 10sec. 2 www.irf.com IRF5851 N-Channel 100 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 10 10 1 1 1.50V 1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.7A I D , Drain-to-Source Current (A) 10 TJ = 25 ° C TJ = 150 ° C 1.5 1.0 1 0.5 0.1 1.5 V DS = 15V 20µs PULSE WIDTH 2.0 2.5 3.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5851 N-Channel 600 500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 2.7A VDS = 16V VDS = 10V 8 C, Capacitance (pF) 400 Ciss 6 300 4 200 100 2 0 Coss Crss 1 10 100 0 0 2 4 6 8 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 10 10 100us TJ = 150 ° C 1 1 1ms TJ = 25 ° C V GS = 0 V 0.6 0.8 1.0 1.2 1.4 10ms 0.1 0.4 0.1 0.1 TA = 25 °C TJ = 150 °C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com N-Channel 3.0 IRF5851 VDS RD 2.5 ID , Drain Current (A) V GS RG 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + 2.0 - VDD 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 0.0 25 50 75 100 125 150 90% TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5851 N-Channel RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.14 0.12 RDS (on) , Drain-to-Source On Resistance (Ω ) 0.30 0.20 0.10 VGS = 2.5V 0.10 0.08 ID = 2.7A VGS = 4.5V 0.00 0 2 4 6 8 10 12 ID , Drain Current (A) 0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 4.5 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5851 N-Channel 1.2 24 20 VGS(th) , Variace ( V ) 1.0 ID = 250µA 16 0.8 Power (W) 12 8 0.6 4 0.4 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 T J , Temperature ( °C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF5851 P-Channel 100 VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V TOP 10 1 1 0.1 -1.2V 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 -1.2V 0.1 0.1 1 20µs PULSE WIDTH TJ = 150 °C 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 16. Typical Output Characteristics Fig 17. Typical Output Characteristics 10 2.0 TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C ID = -2.2A -I D , Drain-to-Source Current (A) 1.5 1 1.0 0.5 0.1 1.2 V DS = -15V 20µs PULSE WIDTH 1.6 2.0 2.4 2.8 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 18. Typical Transfer Characteristics Fig 19. Normalized On-Resistance Vs. Temperature 8 www.irf.com IRF5851 P-Channel 500 400 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -2.2A VDS = -16V VDS = -10V 8 C, Capacitance (pF) Ciss 300 6 200 4 100 Coss Crss 2 0 1 10 100 0 0 2 4 6 8 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C -ID , Drain Current (A) I 10 100us 1 1ms 1 10ms TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 22. Typical Source-Drain Diode Forward Voltage Fig 23. Maximum Safe Operating Area www.irf.com 9 IRF5851 P-Channel 2.5 VDS 2.0 RD VGS RG -ID , Drain Current (A) D.U.T. + 1.5 VGS 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.5 Fig 25a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 VGS 25 50 75 100 125 150 10% TJ , Junction Temperature (°C) Fig 24. Maximum Drain Current Vs. Junction Temperature 90% VDS Fig 25b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 26. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 10 www.irf.com - VDD IRF5851 P-Channel RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.20 RDS (on) , Drain-to-Source On Resistance ( Ω ) 0.24 0.40 0.30 VGS = -2.5V 0.20 0.16 0.12 ID = -2.2A VGS = -4.5V 0.10 0 2 4 6 8 10 -I D , Drain Current (A) 0.08 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 27. Typical On-Resistance Vs. Gate Voltage Fig 28. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 29a. Basic Gate Charge Waveform Fig 29b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 11 IRF5851 P-Channel 1.0 24 20 -VGS(th) , Variace ( V ) 0.8 16 Power (W) ID = -250µA 12 0.6 8 4 0.4 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 T J , Temperature ( °C ) Time (sec) Fig 30. Threshold Voltage Vs. Temperature Fig 31. Typical Power Vs. Time 12 www.irf.com IRF5851 TSOP-6 Package Outline TSOP-6 Part Marking Information EXAMPLE: T HIS IS AN SI3443DV WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 3A YW T OP WAFER LOT NUMBER CODE XXXX BOTT OM 24 25 26 X Y Z PART NUMBER CODE REFERENCE: 3A = SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DAT E CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = FF WW = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 X Y www.irf.com 13 IRF5851 TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 2/02 14 www.irf.com