IRF5M3205

PD - 94292A HEXFET® POWER MOSFET THRU-HOLE (TO-254AA) IRF5M3205 55V, N-CHANNEL Product Summary Part Number IRF5M3205 BVDSS 55V RDS(on) 0.015Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-254AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 35* 35* 140 125 1.0 ±20 475 35 12.5 2.6 -55 to 150 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 08/28/01 IRF5M3205 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 — — 2.0 34 — — — — — — — — — — — — Typ Max Units — 0.056 — — — — — — — — — — — — — — 6.8 — — 0.015 4.0 — 25 250 100 -100 170 32 74 22 80 70 55 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 35A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 35A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 35A VDS = 44V VDD = 28V, ID = 35A, VGS = 10V, RG = 2.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH l Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3600 1200 445 — — — pF Measured from drain lead (6mm / 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 35* 140 1.3 130 410 Test Conditions A V ns nC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5M3205 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 4.5V 10 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 35A  I D , Drain-to-Source Current (A) 1.5 TJ = 25 ° C  TJ = 150 ° C  100 1.0 0.5 10 4.0 15  V DS = 25V 20µs PULSE WIDTH 7.0 5.0 6.0 8.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5M3205 7500 VGS , Gate-to-Source Voltage (V) 6000  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A  16  VDS = 44V VDS = 27V VDS = 11V C, Capacitance (pF) 4500 Ciss  12 3000 C oss C rss 8 1500 4 0 1 10 100 0 0 50  FOR TEST CIRCUIT SEE FIGURE 13 150 100 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100 T J = 150°C 10 T J = 25°C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) ID, Drain-to-Source Current (A) 100 100µs 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 1ms 10ms 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5M3205 80  LIMITED BY PACKAGE VGS 60 V DS RD D.U.T. + I D , Drain Current (A) RG -V DD VGS 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5M3205 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1000  ID 15.7A 22A BOTTOM 35A TOP VD S L D R IV E R 800 RG D .U .T. IA S 600 + V - DD A VGS 20V tp 400 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 0 25 50 75 100 125 150 Starting T , Junction Temperature ( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5M3205 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 25 V, Starting TJ = 25°C, L= 0.8 mH Peak IAS = 35A, VGS =10V, RG= 25Ω ƒ ISD ≤ 35A, di/dt ≤ 230 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — TO-254AA 0.12 [.005] .1 2 ( .0 0 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 6 .6 0 ( .2 6 0 ) 6 .3 2 ( .2 4 9 ) -B 1 .2 7 ( .0 5 0 ) 1 .0 2 ( .0 4 0 ) 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1.2 3 5 ) 3 0 .3 9 ( 1.1 9 9 ) 2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 ) 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 22.73 [.895] 21.21 [.835] LEGEND 1 - C O LL 2 - E M IT 3 - G A TE 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 1 2 3 -C - 4.82 [.190] 3.81 [.150] 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) M C AM B MC 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A 3.81 [.150] 3 .8 1 ( .1 5 0 ) 3X 3 .8 1 ( .1 5 0 ) 2X 2X LEGEND 1- DRAIN 2- SOURCE 3- GATE I RHM57163SED IRHM57163SEU CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7