IRF5M5210

PD - 94247 HEXFET® POWER MOSFET THRU-HOLE (TO-254AA) IRF5M5210 100V, P-CHANNEL Product Summary Part Number IRF5M5210 BVDSS -100V RDS(on) 0.07Ω ID -34A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-254AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight -34 -21 -136 125 1.0 ±20 520 -21 12.5 3.4 -55 to 150 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 06/13/01 IRF5M5210 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — -0.12 — — — — — — — — — — — — — — 6.8 — — 0.07 -4.0 — -25 -250 -100 100 180 25 100 28 150 100 120 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -21A ➃ VDS = VGS, ID = -250µA VDS = -15V, IDS = -21A ➃ VDS = -100V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-10V, ID = -21A VDS = -80V VDD = -50V, ID = -21A, VGS =-10V, RG = 2.5Ω BVDSS Drain-to-Source Breakdown Voltage -100 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 10 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2730 824 465 — — — pF Measured from drain lead (6mm / 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -34 -136 -1.6 260 1.8 Test Conditions A V ns µC Tj = 25°C, IS = -21A, VGS = 0V ➃ Tj = 25°C, IF = -21A, di/dt ≥ 100A/µs VDD ≤ -30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5M5210 1000 -I D , Drain-to-Source Current (A) 100 10 -I D , Drain-to-Source Current (A)  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 1000 100  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 10 -4.5V 1 -4.5V 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -34A  -I D , Drain-to-Source Current (A) TJ = 25 ° C  2.0 100 1.5 TJ = 150 ° C  1.0 10 0.5 1 4 6 8 15  V DS = -50V 20µs PULSE WIDTH 10 12 0.0 -60 -40 -20 VGS = -10V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5M5210 6000 5000 -VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -21A  16 C, Capacitance (pF)  VDS = -80V VDS = -50V VDS = -20V 4000 Ciss  12 3000 C oss 2000 8 C rss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT  SEE FIGURE 13 120 160 200 240 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 100 TJ = 150 ° C  10 TJ = 25 ° C  1 -I D, Drain-to-Source Current (A) 100 10 1ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) 10ms 0.1 0.2 V GS = 0 V  0.8 1.4 2.0 2.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5M5210 35 V DS 30 RD VGS -ID , Drain Current (A) D.U.T. + 25 20 15 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 5 VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - RG V DD 5 IRF5M5210 VDS EAS , Single Pulse Avalanche Energy (mJ) L 1200 1000 RG D .U .T IA S VD D A D R IV E R  ID -9.4A -13.3A BOTTOM -21A TOP VGS -20V 800 tp 0.0 1Ω 600 15V 400 200 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -10V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5M5210 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = -25 V, Starting TJ = 25°C, L= 2.4mH Peak IAS = -21A, VGS = -10V, RG= 25Ω ƒ ISD ≤ - 21A, di/dt ≤ - 400 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 17.40 [.685] 16.89 [.665] B 4.82 [.190] 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] B A 4.06 [.160] 3.56 [.140] 3X 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] B A PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E 3.81 [.150] 3.81 [.150] 2X 2X NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/01 www.irf.com 7