IRF5N3205

PD-94302B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3205 55V, N-CHANNEL Product Summary Part Number IRF5N3205 BVDSS 55V RDS(on) ID 0.008Ω 55A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 55* 55* 220 125 1.0 ±20 140 55 12.5 2.7 -55 to 150 300 (for 5s) 2.6 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/17/05 IRF5N3205 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 — — 2.0 55 — — — — — — — — — — — — Typ Max Units — 0.053 — — — — — — — — — — — — — — 4.0 — — 0.008 4.0 — 25 250 100 -100 170 32 74 30 300 65 35 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A à VDS = VGS, ID = 250µA VDS =15V, IDS = 55A à VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 27.5V, ID = 55A, VGS = 10V, RG = 2.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3600 1200 435 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 55* 220 1.3 130 410 Test Conditions A V ns nC Tj = 25°C, IS = 55A, VGS = 0V à Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 1.0 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRF5N3205 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 4.5V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 55A I D , Drain-to-Source Current (A) 1.5 TJ = 25 ° C TJ = 150 ° C 100 1.0 0.5 10 4.0 V DS = 25V 15 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5N3205 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 55A VDS = 44V VDS = 27V VDS = 11V 16 C, Capacitance (pF) 6000 12 4000 Ciss 8 Coss 2000 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C ID, Drain-to-Source Current (A) 100 100µs 10 TJ = 25 ° C 1 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 1ms 10ms 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 1 VSD ,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5N3205 100 V DS LIMITED BY PACKAGE RD V GS RG 80 D.U.T. + I D , Drain Current (A) -V DD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 TC , Case Temperature ( °C) 75 100 125 150 Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5N3205 250 EAS , Single Pulse Avalanche Energy (mJ) 15V 200 ID 24.6A 35A BOTTOM 55A TOP VDS L DRIVER 150 RG D.U.T. IAS tp + V - DD VGS 20V A 100 0.01Ω 50 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5N3205 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 25 V, Starting TJ = 25°C, L= 0.09mH Peak I AS = 55A, V GS = 10V, RG= 2 5Ω ƒ ISD ≤ 55A, di/dt ≤ 217A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 www.irf.com 7