IRF5N4905

PD - 94163 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N4905 55V, P-CHANNEL Product Summary Part Number IRF5N4905 BVDSS -55V RDS(on) 0.024Ω ID -55A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page -55* -36 -220 125 1.0 ±20 330 -36 12.5 4.0 -55 to 150 300 (for 5 s) 2.6 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/09/01 IRF5N4905 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -55 — — -2.0 19 — — — — — — — — — — — — Typ Max Units — -0.051 — — — — — — — — — — — — — — 5.9 — — 0.024 -4.0 — -25 -250 -100 100 195 45 75 35 165 95 130 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = 10V, ID = -36A ➃ VDS = VGS, ID = -250µA VDS ≥ -25V, IDS = -36A ➃ VDS = -55V ,VGS=0V VDS = -44V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-10V, ID = -36A VDS = -44V VDD = -28V, ID = -36A, VGS =-10V, RG = 2.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3633 1312 505 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -55* -220 -1.6 120 365 Test Conditions A V ns nC Tj = 25°C, IS = -36A, VGS = 0V ➃ Tj = 25°C, IF = -36A, di/dt ≥ 100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5N4905 1000 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 1000 100  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 10 -4.5V 10 -4.5V 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 -I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -55A  100 1.5 10 1.0 1 0.5 0.1 4 5 6 7 8 15  V DS = -25V 20µs PULSE WIDTH 9 10 11 12 0.0 -60 -40 -20 VGS = -10V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5N4905 7000 6000 -VGS , Gate-to-Source Voltage (V)  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -36A  16 C, Capacitance (pF) 5000  VDS = -44V VDS = -28V VDS = -11V Ciss  4000 12 3000 C oss 8 2000 1000 C rss 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT  SEE FIGURE 13 120 160 200 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 100 TJ = 150 ° C  10 TJ = 25 ° C  1 -I D, Drain-to-Source Current (A) 100 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 1ms 10ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 2.2 100 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5N4905 60  LIMITED BY PACKAGE 50 V DS VGS RG RD -ID , Drain Current (A) D.U.T. + 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VGS td(on) tr t d(off) tf 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - 40 V DD 5 IRF5N4905 700 VDS EAS , Single Pulse Avalanche Energy (mJ) L 600 RG D .U .T IA S VD D A D R IV E R 500  ID -16A -23A BOTTOM -36A TOP VGS -20V tp 0.0 1Ω 400 300 15V 200 100 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -10V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5N4905 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = -25 V, Starting TJ = 25°C, L= 0.5mH Peak IAS = -36A, VGS = -10V, RG= 25Ω ƒ ISD ≤ -36A, di/dt ≤ -237 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -55V, TJ ≤ 150°C Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7