IRF5NJ5305

PD - 94033 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number IRF5NJ5305 BVDSS -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page -22* -16 -88 75 0.6 ±20 160 -16 7.5 2.8 -55 to 150 300 (for 5 s) 1.0 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 11/10/00 IRF5NJ5305 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -55 — — -2.0 8.0 — — — — — — — — — — — — Typ Max Units — -0.049 — — — — — — — — — — — — — — 4.0 — — 0.065 -4.0 — -25 -250 -100 100 70 17 30 26 125 56 74 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = 10V, ID = -16A ➃ VDS = VGS, ID = -250µA VDS = -25V, IDS = -16A ➃ VDS = -55V ,VGS=0V VDS = -44V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-10V, ID = -16A VDS = -44V VDD = -28V, ID = -16A, RG = 6.8Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1290 495 203 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -22* -88 -1.3 100 250 Test Conditions A V ns nC Tj = 25°C, IS = -16A, VGS = 0V ➃ Tj = 25°C, IF = -16A, di/dt ≥ 100A/µs VDD ≤ -30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ5305 100 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 10  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -4.5V -4.5V 1 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 -I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -22A  1.5 10 1.0 0.5 1 4 6 8 15  V DS = -25V 20µs PULSE WIDTH 10 12 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -10V  0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5NJ5305 2500 2000 -VGS , Gate-to-Source Voltage (V)  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -16A  16 C, Capacitance (pF)  VDS = -44V VDS = -28V VDS = -11V 1500 Ciss  12 1000 C oss C rss 8 500 4 0 1 10 100 0 0 20 FOR TEST CIRCUIT  SEE FIGURE 13 40 60 80 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) TJ = 150 ° C  10 TJ = 25 ° C  1 -I D , Drain-to-Source Current (A) 100 10 1ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 -VDS , Drain-toSource Voltage (V) 100 10ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5NJ5305 30  LIMITED BY PACKAGE 25 V DS VGS RG RD -ID , Drain Current (A) D.U.T. + 15 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VGS td(on) tr t d(off) tf 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1  P DM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - 20 V DD 5 IRF5NJ5305 350 VDS L EAS , Single Pulse Avalanche Energy (mJ) 300 250 RG D .U .T IA S VD D A D R IV E R  ID -7.2A -10A BOTTOM -16A TOP -20V -10V tp 0.0 1Ω 200 150 15V 100 50 0 25 50 75 100 125 150 Fig 12a. Unclamped Inductive Test Circuit IAS Starting T , Junction Temperature ( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -10V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5NJ5305 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = -25 V, Starting TJ = 25°C, L= 1.3mH Peak IAS = -16A, RG= 25Ω ƒ ISD ≤ -16A, di/dt ≤ -230 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -55V, TJ ≤ 150°C Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00 www.irf.com 7