IRF5NJ540

PD - 94020A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRF5NJ540 BVDSS IRF5NJ540 100V, N-CHANNEL 100V RDS(on) 0.052Ω ID 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 16 88 75 0.60 ±20 200 16 7.5 4.1 -55 to 150 300 (for 5 s) 1.0 Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 7/13/01 IRF5NJ540 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 11 — — — — — — — — — — — — Typ Max Units — 0.11 — — — — — — — — — — — — — — 4.0 — — 0.052 4.0 — 25 250 100 -100 104 20 43 24 125 86 82 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 16A ➃ VDS = VGS, ID = 250µA VDS = 50V, IDS = 16A ➃ VDS = 100V ,VGS=0V VDS = 80V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 16A VDS = 80V VDD = 50V, ID = 16A, VGS =10V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1487 353 182 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 22* 88 1.3 240 1.67 Test Conditions A V nS µC Tj = 25°C, IS = 16A, VGS = 0V ➃ Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ540 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 4.5V 1 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C R DS(on) , Drain-to-Source On Resistance (Normalized)  TJ = 150 ° C  ID = 22A  2.0 1.5 10 1.0 0.5 1 4.0 15  V DS = 25V 20µs PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5NJ540 3000 2500 VGS , Gate-to-Source Voltage (V)  VGS Ciss Crss Coss = = = = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 16A  16  VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 2000 Ciss  1500 12 8 1000 C oss 500 C rss 4 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT  SEE FIGURE 13 60 80 100 120 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 150 ° C  ISD , Reverse Drain Current (A) 10 TJ = 25 ° C  1 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 1ms 10ms 100 1000 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5NJ540 30  LIMITED BY PACKAGE 25 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 20 -VDD VGS 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.001 0.01 1  P DM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJ540 400 EAS , Single Pulse Avalanche Energy (mJ) 15V 300  TOP BOTTOM ID 7.2A 10A 16A VDS L D R IV E R RG D .U .T. IA S + - VD D 200 A VGS 20V tp 0 .01 Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5NJ540 Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 25 V, Starting TJ = 25°C, L=1.5mH Peak IAS =16A, VGS = 10 V, RG= 25Ω ƒ ISD ≤ 16A, di/dt ≤ 350 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 100V, TJ ≤ 150°C Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 www.irf.com 7