IRF5Y6215CM

PD - 94165 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number IRF5Y6215CM BVDSS -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -11 -7.0 -44 75 0.6 ±20 135 -6.6 7.5 12 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/10/01 IRF5Y6215CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — 0.18 — — — — — — — — — — — — — — 6.8 — — 0.29 -4.0 — -25 -250 -100 100 66 13 40 25 65 75 53 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -6.6A ➃ VDS = VGS, ID = -250µA VDS ≥ 15V, IDS = -6.6A ➃ VDS = -150V ,VGS=0V VDS = -120V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS = -10V, ID = -6.6A VDS = -120V VDD = -75V, ID = -6.6A, VGS = -10V, RG = 6.8Ω BVDSS Drain-to-Source Breakdown Voltage -150 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 6.0 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1000 230 115 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -11 -44 -1.6 240 1.7 Test Conditions A V ns µC Tj = 25°C, IS = -6.6A, VGS = 0V ➃ Tj = 25°C, IF = -6.6A, di/dt ≤ 100A/µs VDD ≤ −50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5Y6215CM 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A)  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 10  VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 1 1 -4.5V -4.5V 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 -I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID  = -11A 2.0 1.5 1.0 1 0.5 0.1 4 6 8 15  V DS = -50V 20µs PULSE WIDTH 10 12 14 0.0 -60 -40 -20 VGS = -10V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5Y6215CM 2000 -VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID  = -6.6A 16  VDS = -120V VDS = -75V VDS = -30V C iss  1200 12 800 C oss C rss 8 400 4 0 1 10 100 0 0 20 FOR TEST CIRCUIT  SEE FIGURE 13 40 60 80 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 150 ° C  -ISD , Reverse Drain Current (A) 10 TJ = 25 ° C  -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) 10ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 2.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5Y6215CM 12 V DS VGS RG RD 10 D.U.T. + -ID , Drain Current (A) 8 6 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 2 VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01  P DM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRF5Y6215CM EAS , Single Pulse Avalanche Energy (mJ) VDS L 250 RG D .U .T IA S VD D A D R IV E R 200  ID -3.0A -4.2A BOTTOM -6.6A TOP VGS -20V tp 0.01 Ω 150 15V 100 50 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF -10V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5Y6215CM Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = -50 V, Starting TJ = 25°C, L= 6.2mH Peak IAS = -6.6A, VGS =-10 V, RG= 25Ω ƒ ISD ≤ -6.6A, di/dt ≤ 380 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -150V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7