IRF6215PBF

PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.29Ω G S ID = -13A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.4 ––– 62 Units °C/W 11/5/03 IRF6215PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. -150 ––– ––– ––– -2.0 3.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 36 53 37 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.29 VGS = -10V, ID = -6.6A , TJ = 25°C Ω 0.58 VGS = -10V, ID = -6.6A , TJ = 150°C -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -50V, ID = -6.6A -25 VDS = -150V, VGS = 0V µA -250 VDS = -120V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 66 ID = -6.6A 8.1 nC VDS = -120V 35 VGS = -10V, See Fig. 6 and 13 ––– VDD = -75V ––– ID = -6.6A ns ––– RG = 6.8Ω ––– RD = 12Ω, See Fig. 10 D Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact S 860 ––– VGS = 0V 220 ––– pF VDS = -25V 130 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -13 showing the A G integral reverse ––– ––– -44 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V ––– 160 240 ns TJ = 25°C, IF = -6.6A ––– 1.2 1.7 µC di/dt = -100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = -6.6A. (See Figure 12) ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF6215PbF 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 -ID , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 20µs PULSE WIDTH TJ = 175°C C 1 10 -4.5V 1 1 10 20µs PULSE WIDTH TJ = 25°C c A 100 1 100 A -V , Drain-to-Source Voltage (V) DS -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.5 I D = -11A -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 1.5 1.0 0.5 1 4 5 6 7 VDS = -50V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = -10V 80 100 120 140 160 180 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF6215PbF 2000 1600 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = -6.6A 16 VDS = -120V VDS = -75V VDS = -30V C, Capacitance (pF) Ciss 1200 12 Coss 800 8 Crss 400 4 0 1 10 100 A 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs 10 TJ = 175°C TJ = 25°C -I D , Drain Current (A) 10 100µs 1 1ms 0.1 0.2 0.6 1.0 1.4 VGS = 0V A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 100 10ms 1.8 1000 A -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF6215PbF 15 VDS 12 RD VGS RG D.U.T. + -ID , Drain Current (A) 9 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 10% 25 50 TC , Case Temperature ( °C) 75 100 125 150 175 Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - VDD IRF6215PbF E AS , Single Pulse Avalanche Energy (mJ) VDS L 800 TOP BOTTOM 600 RG D.U.T IAS -20V DRIVER 0.01Ω VDD A ID -2.7A -4.7A -6.6A tp 400 15V 200 Fig 12a. Unclamped Inductive Test Circuit I AS 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V VDS IRF6215PbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF6215PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIO NAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03