IRF6216

PD - 94297 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters IRF6216 HEXFET® Power MOSFET RDS(on) max ID 0.240Ω@VGS =-10V -2.2A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -2.2 -1.9 -19 2.5 0.02 ± 20 7.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 02/12/02 IRF6216 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Typ. ––– -0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA ƒ 0.240 Ω VGS = -10V, ID = -1.3A ƒ -5.0 V VDS = VGS, ID = -250µA -25 VDS = -150V, VGS = 0V µA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 33 7.2 15 18 15 33 26 1280 220 53 1290 99 220 Max. Units Conditions ––– S VDS = -50V, ID = -1.3A 49 ID = -1.3A 11 nC VDS = -120V 23 VGS = -10V, ––– VDD = -75V ––– ID = -1.3A ns ––– RG = 6.5Ω ––– VGS = -10V ƒ ––– VGS = 0V ––– VDS = -25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to -120V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 200 -4.0 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 80 310 -2.2 A -19 -1.6 120 460 V nS nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs ƒ D S ƒ 2 www.irf.com IRF6216 100 10 1 -I , Drain-to-Source Current (A)  TOP VGS -15V -12V -10V -8.0V -7.0V BOTTOM 100 10  TOP BOTTOM VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -5.0V 1 0.1 D 0.01 0.1 1  20µs PULSE WIDTH T J= 25 ° C 10 100 0.1 0.1 1  20µs PULSE WIDTH T J= 150 10 °C 100 -V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID  = -2.2A TJ = 25 ° C  2.0 -I D Drain-to-Source Current (A) , 10 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 150 ° C  1.5 1.0 1 0.5 0.1 5.0 5.5 6.0 6.5  V DS= -50V 20µs PULSE WIDTH 7.0 7.5 8.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = -10V  100 120 140 160 -V GS Gate-to-Source Voltage (V) , TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF6216 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 ID  = -1.3A 10  VDS = -120V VDS = -75V VDS = -30V C, Capacitance(pF) 1000 -V GS, Gate-to-Source Voltage (V) Ciss 8 6 Coss 100 4 Crss 2 10 1 10 100 1000 0 0 5 10 15 20 25 30 35 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1msec 1 10msec Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 10  TJ = 150 ° C  TJ = 25 ° C 1 0.1 0.4 0.6 0.8 V G S= 0 V  1.0 1.2 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 0.1 -V SD,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF6216 2.5 VDS 2.0 RD VGS RG D.U.T. + -I D, Drain Current (A) 1.5 VGS 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 10 0.20 0.10 Thermal Response 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1  Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJA  P DM t1 t2 +T A 100 10 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 1000 5 IRF6216 R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.23 1.50 RDS (on) , Drain-to-Source On Resistance (Ω ) 0.22 1.00 VGS = -10V 0.21 0.50 0.20 ID = -2.2A 0.19 0 2 4 6 8 10 12 14 16 18 0.00 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF -VGS QGS + D.U.T. VDS QG QGD 500 VG VGS -3mA Charge 400  TOP ID -1.8A -3.2A -4.0A BOTTOM IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform L E AS , Single Pulse Avalanche Energy (mJ) 300 200 VD S I AS RG D .U .T IA S D R IV E R 0 .01 Ω VD D A 100 -20V tp 0 25 50 75 100 125 150 tp V ( BR ) DSS 15V Starting Tj, Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF6216 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF6216 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( . 484 ) 1 1.7 ( . 461 ) 8.1 ( . 318 ) 7.9 ( . 312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 ( 12.992 ) M AX . 14.4 0 ( . 566 ) 12.4 0 ( . 488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. ‚ Starting TJ = 25°C, L = 25mH RG = 25Ω, IAS = -4.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02 8 www.irf.com