IRF6216PBF

SMPS MOSFET PD - 95293 IRF6216PbF HEXFET® Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free l VDSS -150V RDS(on) max ID 0.240W@VGS =-10V -2.2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S 1 8 A D D D D S S G 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -2.2 -1.9 -19 2.5 0.02 ± 20 7.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 06/06/05 IRF6216PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Typ. ––– -0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA ƒ 0.240 Ω VGS = -10V, ID = -1.3A ƒ -5.0 V VDS = VGS, ID = -250µA -25 VDS = -150V, VGS = 0V µA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 33 7.2 15 18 15 33 26 1280 220 53 1290 99 220 Max. Units Conditions ––– S VDS = -50V, ID = -1.3A 49 ID = -1.3A 11 nC VDS = -120V 23 VGS = -10V, ––– VDD = -75V ––– ID = -1.3A ns ––– RG = 6.5Ω ––– VGS = -10V ƒ ––– VGS = 0V ––– VDS = -25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to -120V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 200 -4.0 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 80 310 -2.2 A -19 -1.6 120 460 V nS nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs ƒ D S ƒ 2 www.irf.com IRF6216PbF 100 TOP VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V 100 TOP 10 -I D, Drain-to-Source Current (A) BOTTOM -I D, Drain-to-Source Current (A) BOTTOM VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V 10 1 -5.0V -5.0V 1 0.1 20µs PULSE WIDTH T J= 25 ° C 0.01 0.1 1 10 100 20µs PULSE WIDTH T J= 150 ° C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D = -2.2A 2.0 10 (Normalized) TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance -I D, Drain-to-Source Current (A) TJ = 25 ° C 1.5 1.0 1 0.5 V DS -50V = 20µs PULSE WIDTH 0.1 5.0 5.5 6.0 6.5 7.0 7.5 8.0 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V GS Gate-to-Source Voltage (V) , TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF6216PbF 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd -V GS , Gate-to-Source Voltage (V) 12 ID = -1.3A 10 VDS = -120V VDS = -75V VDS = -30V C, Capacitance(pF) 1000 Ciss 8 6 Coss 100 4 Crss 2 10 1 10 100 1000 0 0 5 10 15 20 25 30 35 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1msec 1 10msec Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 10 TJ = 150 ° C TJ = 25 ° C 1 V GS= 0 V 0.1 0.4 0.6 0.8 1.0 1.2 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 0.1 -V SD,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF6216PbF 2.5 V DS 2.0 RD VGS RG D.U.T. + -I D , Drain Current (A) 1.5 VGS 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 10 0.20 0.10 Thermal Response 0.05 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 +T A 100 1000 0.02 1 0.01 J = P DM x Z thJA 10 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF6216PbF R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.23 1.50 R DS (on) , Drain-to-Source On Resistance ( Ω ) 0.22 1.00 VGS = -10V 0.21 0.50 0.20 ID = -2.2A 0.19 0 2 4 6 8 10 12 14 16 18 0.00 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF -VGS QGS + D.U.T. VDS QG QGD 500 VG TOP Charge VGS -3mA 400 BOTTOM ID -1.8A -3.2A -4.0A IG ID Current Sampling Resistors EAS , Single Pulse Avalanche Energy (mJ) Fig 14a&b. Basic Gate Charge Test Circuit and Waveform L 300 200 VDS I AS RG D.U.T IAS VDD A DRIVER 100 -20V tp 0.01Ω 0 25 50 75 100 125 150 tp V(BR)DSS 15V Starting Tj, Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF6216PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A A1 b INCHE S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIME T E RS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 B AS IC .025 B AS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 B AS IC 0.635 B AS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT E S : 1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIME T E RS [INCHES ]. 4. OU T LINE CONF ORMS T O JE DEC OU T LINE MS -012AA. 5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RU S IONS NOT T O EXCEE D 0.15 [.006]. 6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RU S IONS NOT T O EXCEE D 0.25 [.010]. 7 DIMENS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O A S UB S T RAT E . 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE : T HIS IS AN IRF 7101 (MOS F ET ) DAT E CODE (YWW) P = DE S IGNAT E S LE AD-FRE E PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WE EK A = AS S E MB LY S IT E CODE LOT CODE PART NUMB ER INT E RNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 7 IRF6216PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. ‚ Starting TJ = 25°C, L = 25mH RG = 25Ω, IAS = -4.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/05 8 www.irf.com