IRF630NS

PD - 94005B Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l Fifth Generation HEXFET ® P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application. IRF630N IRF630NS IRF630NL HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S ID = 9.3A TO-220AB IRF630N D2Pak IRF630NS TO-262 IRF630NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew„ Max. 9.3 6.5 37 82 0.5 ±20 94 9.3 8.2 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C www.irf.com 1 10/08/04 IRF630N/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 ––– ––– 2.0 4.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.9 14 27 15 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.30 Ω VGS = 10V, ID = 5.4A ƒ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 5.4A ƒ 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 35 ID = 5.4A 6.5 nC VDS = 160V 17 VGS = 10V ƒ ––– VDD = 100V ––– ID = 5.4A ns ––– RG = 13Ω ––– RD = 18Ω ƒ D Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact S 575 ––– VGS = 0V 89 ––– VDS = 25V 25 ––– pF ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 9.3 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 5.4A, VGS = 0V ƒ ––– 117 176 ns TJ = 25°C, IF = 5.4A ––– 542 813 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.83 ––– 62 40 Units °C/W www.irf.com 2 IRF630N/S/L 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 4.5V 4.5V 1 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 9.3A I D , Drain-to-Source Current (A) 10 TJ = 175 ° C 1 TJ = 25 ° C 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF630N/S/L 1200 1000 Crss = C gd Coss = C + C ds gd VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds 16 ID = 5.4A V DS= 160V V DS= 100V V DS= 40V 12 C, Capacitance(pF) 800 Ciss 600 8 Coss 400 4 200 Crss 0 1 10 100 1000 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 ID , Drain Current (A) 100 10us 10 100us TJ = 175 ° C TJ = 25 ° C 1 1 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRF630N/S/L 12 12 VDS VGS RG RD D.U.T. + V DD ID , Drain Current (A) ID , Drain Current (A) 9 9 - 10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 3 VDS 90% 0 0 25 25 50 50 T TC CCase Temperature ( ° C) , 75 100 125 150 75 125 150 , Case100 Temperature ( ° C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF630N/S/L EAS , Single Pulse Avalanche Energy (mJ) 200 15V ID 2.2A 3.8A BOTTOM 5.4A TOP VDS L DRIVER 150 RG 20V D.U.T IAS tp + V - DD A 100 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 6 IRF630N/S/L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF630N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS IGBTs, CoPACK 1234GATE COLLECTOR EMITTER COLLECTOR 14.09 (.555) 13.47 (.530) 2GATE DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPLE : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R LOGO AS S E MB L Y LOT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com 8 IRF630N/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F530S WITH L OT CODE 8024 AS S EMBL ED ON WW 02, 2000 IN T HE AS S EMBL Y L INE "L" Note: "P" in as sembly line pos ition indicates "L ead-Free" INTE RNAT IONAL RE CT IFIER LOGO AS S E MBLY L OT CODE PART NU MBE R F 530S DAT E CODE YEAR 0 = 2000 WEE K 02 L INE L OR INT ERNAT IONAL RECT IF IER LOGO AS S EMB LY L OT CODE PART NUMB ER F 530S DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE www.irf.com 9 IRF630N/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS S E MBLE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO AS S E MB LY LOT CODE PART NUMB E R DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C OR INT E RNAT IONAL RE CT IF IER LOGO AS S EMB LY LOT CODE PART NUMB ER DAT E CODE P = DE S IGNAT E S LE AD-F REE PRODUCT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S EMB LY S IT E CODE www.irf.com 10 IRF630N/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. Notes: NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package. ‚ Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 5.4A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † ISD ≤ 5.4A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] (IRF630N) & industrial market (IRF630NS/L). Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 www.irf.com 11