IRF640NLPBF

PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l IRF640NPbF IRF640NSPbF IRF640NLPbF HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.15Ω G S Fifth Generation HEXFET ® P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. ID = 18A TO-220AB IRF640NPbF D2Pak IRF640NSPbF TO-262 IRF640NLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew„ Max. 18 13 72 150 1.0 ± 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C www.irf.com 1 2/25/04 IRF640NPbF/SPbF/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 ––– ––– 2.0 6.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 19 23 5.5 4.5 7.5 1160 185 53 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.15 Ω VGS = 10V, ID = 11A ƒ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 11A ƒ 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 11A 11 nC VDS = 160V 33 VGS = 10V, See Fig. 6 and 13 ––– VDD = 100V ––– ID = 11A ns ––– RG = 2.5Ω ––– RD = 9.0Ω, See Fig. 10 ƒ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 18 showing the A G integral reverse ––– ––– 72 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ƒ ––– 167 251 ns TJ = 25°C, IF = 11A ––– 929 1394 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.0 ––– 62 40 Units °C/W www.irf.com 2 IRF640NPbF/SPbF/LPbF 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 4.5V 4.5V 1 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 18A I D , Drain-to-Source Current (A) TJ = 175 ° C 10 TJ = 25 ° C 1 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF640NPbF/SPbF/LPbF 2500 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 11A 16 V DS= 160V V DS= 100V V DS= 40V C, Capacitance(pF) 1500 Ciss 12 1000 8 Coss 500 4 Crss 0 1 10 100 1000 0 0 20 40 60 80 VDS Drain-to-Source Voltage (V) , QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 175 ° C 10 100 10us 100us 1ms 1 10ms TJ = 25 ° C 1 10 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD ,Source-to-Drain Voltage (V) 0.1 0.1 TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRF640NPbF/SPbF/LPbF 20 20 16 16 12 12 8 V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + VDD ID , Drain Current (A) ID , Drain Current (A) - 8 Fig 10a. Switching Time Test Circuit VDS 90% 4 4 0 0 25 25 50 75 100 125 150 50 T 75 125 150 , Case100 Temperature ( ° C) TC CCase Temperature ( ° C) , 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF640NPbF/SPbF/LPbF EAS , Single Pulse Avalanche Energy (mJ) 600 15V 500 VDS L DRIVER ID 4.4A 7.6A BOTTOM 11A TOP 400 RG 20V D.U.T IAS tp + - VDD A 300 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 100 0 25 Starting TJ , Junction Temperature ( ° C) 50 75 100 125 150 175 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 6 IRF640NPbF/SPbF/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF640NPbF/SPbF/LPbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com 8 IRF640NPbF/SPbF/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" IN T E R N AT IO N AL R E CT IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 53 0 S D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com 9 IRF640NPbF/SPbF/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE www.irf.com 10 IRF640NPbF/SPbF/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 4.2mH RG = 25Ω, IAS = 11A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). † ISD ≤ 11A, di/dt ≤ 344A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/