IRF640NS

PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET ® P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.15Ω G S ID = 18A TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew„ Max. 18 13 72 150 1.0 ± 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C www.irf.com 1 10/09/00 IRF640N/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 ––– ––– 2.0 6.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 19 23 5.5 4.5 7.5 1160 185 53 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.15 Ω VGS = 10V, ID = 11A ƒ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 11A ƒ 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 11A 11 nC VDS = 160V 33 VGS = 10V, See Fig. 6 and 13 ––– VDD = 100V ––– ID = 11A ns ––– RG = 2.5Ω ––– RD = 9.0Ω, See Fig. 10 ƒ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 18 showing the A G integral reverse 72 ––– ––– S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ƒ ––– 167 251 ns TJ = 25°C, IF = 11A ––– 929 1394 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.0 ––– 62 40 Units °C/W www.irf.com 2 IRF640N/S/L 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 4.5V 4.5V 1 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 175°C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 18A I D , Drain-to-Source Current (A) TJ = 175 ° C 10 TJ = 25 ° C 1 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF640N/S/L 2500 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd 20 ID = 11A 16 V DS= 160V V DS= 100V V DS= 40V C, Capacitance(pF) 1500 Ciss 12 1000 8 Coss 500 4 Crss 0 1 10 100 1000 0 0 20 40 60 80 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C 10 ID , Drain Current (A) 100 10us TJ = 25 ° C 1 10 100us 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.1 TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRF640N/S/L RD 20 20 VDS VGS D.U.T. + VDD ID , Drain Current (A) ID , Drain Current (A) 16 16 RG - 12 12 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 8 Fig 10a. Switching Time Test Circuit VDS 4 4 90% 0 0 25 25 50 50 75 100 125 150 125 150 TC 75 , Case100 Temperature ( ° C) TC , Case Temperature ( ° C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF640N/S/L EAS , Single Pulse Avalanche Energy (mJ) 600 15V 500 ID 4.4A 7.6A BOTTOM 11A TOP VDS L D R IV E R 400 RG 20V D .U .T IA S tp + - VD D A 300 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 6 IRF640N/S/L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF640N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .87 (.11 3 ) 2 .62 (.10 3 ) 10.5 4 (.4 15 ) 10.2 9 (.4 05 ) 3 .78 (.14 9 ) 3 .54 (.13 9 ) -A6.4 7 (.255 ) 6.1 0 (.240 ) -B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M BAM 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.10 4 ) 1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H 3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A IN T E R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE PART NUMBER IR F 1 0 10 9 24 6 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK www.irf.com 8 IRF640N/S/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200 ) 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X D2Pak Part Marking Information IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE PART NUMBER F530S 9246 9B 1M A D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK www.irf.com 9 IRF640N/S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 10 IRF640N/S/L D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1.6 0 (.06 3 ) 1.5 0 (.05 9 ) 0.3 68 (.014 5 ) 0.3 42 (.013 5 ) F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.60 (.4 57 ) 1 1.40 (.4 49 ) 1 5.42 (.6 09 ) 1 5.22 (.6 01 ) 2 4.30 (.95 7) 2 3.90 (.94 1) TR L 10.90 (.42 9) 10.70 (.42 1) 1.75 (.069 ) 1.25 (.049 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4.7 2 (.1 36 ) 4.5 2 (.1 78 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M A X. 60.00 (2.362) M IN . Notes: max. junction temperature. NOTES : 1. C O M F O R M S T O EIA -418. 2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 26.40 (1.03 9) 24.40 (.961 ) 3 30.40 (1.197) M AX. 4  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 4.2mH RG = 25Ω, IAS = 11A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † ISD ≤ 11A, di/dt ≤ 344A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 www.irf.com 11