IRF644NS

PD - 94859 l l l l l l l l Description Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free (only the TO-220AB version is currently available in a lead-free configuration) HEXFET® Power MOSFET D IRF644NPbF IRF644NS IRF644NL VDSS = 250V G S RDS(on) = 240mΩ ID = 14A Fifth Generation HEXFET ® P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB IRF644NPbF D2Pak IRF644NS TO-262 IRF644NL The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 14 9.9 56 150 1.0 ± 20 180 † 8.4 15 7.9 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C www.irf.com 1 12/2/03 IRF644NPbF/644NSPbF/644NLPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 250 ––– ––– 2.0 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 21 30 17 4.5 7.5 1060 140 38 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 240 mΩ VGS = 10V, ID = 8.4A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 8.4A„ 25 VDS = 250V, VGS = 0V µA 250 VDS = 200V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 54 ID = 8.4A 9.2 nC VDS = 200V 26 VGS = 10V, See Fig. 6 and 13 ––– VDD = 125V ––– ID = 8.4A ns ––– RG = 6.2Ω ––– VGS = 10V, See Fig. 10 „ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 ––– ––– showing the A G integral reverse 56 ––– ––– S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „ ––– 165 250 ns TJ = 25°C, IF = 14A ––– 1.0 1.6 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface ‡ Junction-to-Ambient‡ Junction-to-Ambient (PCB mount)** Typ. ––– 0.50 ––– ––– Max. 1.0 ––– 62 40 Units °C/W 2 www.irf.com IRF644NPbF/644NSPbF/644NLPbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 1 4.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 20µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 I D , Drain-to-Source Current (A) TJ = 175° C ID = 14A TJ = 25 ° C 10 1 V DS= 50V 20µs PULSE WIDTH 4 6 8 10 11 13 15 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF644NPbF/644NSPbF/644NLPbF 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 8.4A 16 V DS= 200V V DS= 125V V DS= 50V C, Capacitance(pF) 1000 Ciss 12 Coss 100 8 Crss 4 10 1 10 100 0 0 12 24 36 48 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 TJ = 175 ° C ID , Drain-to-Source Current (A) 100 10 100µsec 1msec Tc = 25°C Tj = 175°C Single Pulse 1 10 100 1 TJ = 25 ° C 1 10msec 0.1 0.0 V GS = 0 V 0.4 0.8 1.1 1.5 0.1 VSD ,Source-to-Drain Voltage (V) 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF644NPbF/644NSPbF/644NLPbF 15 VDS 12 RD VGS RG ID , Drain Current (A) D.U.T. + -VDD 9 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 TC , Case Temperature ( ° C) 75 100 125 150 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF644NPbF/644NSPbF/644NLPbF EAS , Single Pulse Avalanche Energy (mJ) 15V 300 VDS L DRIVER 240 ID 3.4A 5.9A BOTTOM 8.4A TOP RG 20V D.U.T IAS tp + V - DD 180 A 0.01Ω 120 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 60 0 25 Starting TJ , Junction Temperature ( ° C) 50 75 100 125 150 175 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF644NPbF/644NSPbF/644NLPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF644NPbF/644NSPbF/644NLPbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E: T HIS IS AN IR F1010 L OT CODE 1789 AS S E MBL E D ON WW 19, 1997 IN T HE AS S E MB LY L INE "C" INT E RNAT IONAL RE CT IF IE R L OGO LOT CODE PAR T NUMB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE 8 www.irf.com IRF644NPbF/644NSPbF/644NLPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 9 IRF644NPbF/644NSPbF/644NLPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1 - GATE 2 - COLLECTOR 3 - EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C 10 www.irf.com IRF644NPbF/644NSPbF/644NLPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 5.0µH RG = 25Ω, IAS = 8.4A. (See Figure 12) max. junction temperature. (See fig. 11) † This is a calculated value limited to TJ = 175°C . ‡ This is only applied to TO-220AB package. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint & soldering techniques refer to application note #AN-994. ƒ ISD ≤ 8.4A, di/dt ≤ 378A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. Data and specifications subject to change without notice. This product has been designed and qualified for the (IRF644NPbF) automotive [Q101] & (IRF644NS/L) industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/03 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/