IRF6775MTRPBF

PD - 97117 DIGITAL AUDIO MOSFET IRF6775MTRPbF Key Parameters 150 47 25.0 3.0 V m: nC Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) SQ SX ST SH MQ MX VDS RDS(on) typ. @ VGS = 10V Qg typ. RG(int) max. 6 ' * 6 ' MZ MT MN MZ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 25°C PD @TA = 70°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 150 ± 20 28 4.9 3.9 39 89 2.8 1.8 33 5.6 0.022 -40 to + 150 Units V A ™ Maximum Power Dissipation e Power Dissipation e Power Dissipation W Single Pulse Avalanche Energy Avalanche Current Ù d mJ A W/°C °C Linear Derating Factor Operating Junction and e Storage Temperature Range Thermal Resistance RθJA RθJA RθJA RθJC RθJ-PCB ek Junction-to-Ambient hk Junction-to-Ambient ik Junction-to-Case jk Junction-to-Ambient Parameter Typ. ––– 12.5 20 ––– 1.4 Max. 45 ––– ––– 1.4 ––– Units °C/W Junction-to-PCB Mounted Notes  through ‰ are on page 2 www.irf.com 1 4/17/07 IRF6775MTRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS IGSS RG(int) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. 150 ––– ––– 3.0 ––– ––– ––– ––– ––– Typ. ––– 0.17 47 ––– ––– ––– ––– ––– ––– Max. ––– ––– 56 5.0 20 250 100 -100 3.0 Units V V/°C mΩ V μA nA Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A VDS = VGS, ID = 100μA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 25 5.8 1.4 6.6 11 8.0 5.9 7.8 5.8 15 1411 193 40 1557 93 175 Max. ––– 36 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units S VDS = 75V VGS = 10V ID = 5.6A nC Conditions VDS = 50V, ID = 5.6A See Fig. 6 and 17 VDD = 75V ID = 5.6A ns RG = 6.0Ω VGS = 10V VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 120V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 120V f g Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 62 164 Max. 28 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. G S D Ù 39 1.3 ––– ––– V ns nC TJ = 25°C, IS = 5.6A, VGS = 0V TJ = 25°C, IF = 5.6A, VDD = 25V di/dt = 100A/μs f f Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A. ƒ Surface mounted on 1 in. square Cu board. „ Pulse width ≤ 400μs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † Used double sided cooling , mounting pad with large heatsink. ‡ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (Drain) of part. ˆ TC measured with thermal couple mounted to top ‰ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRF6775MTRPbF 100 TOP 100 VGS 15V 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM BOTTOM 10 10 5.5V 5.5V ≤ 60μs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 ≤ 60μs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 2.5 VDS = 25V ID, Drain-to-Source Current(Α) 10 ≤ 60μs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.6A VGS = 10V 2.0 1 1.5 0.1 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 0.01 3.0 4.0 5.0 6.0 7.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID= 5.6A 16 10000 C, Capacitance (pF) VDS = 120V VDS= 75V VDS= 30V 12 1000 Ciss 8 Coss 100 Crss 10 1 10 100 1000 4 0 0 10 20 30 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF6775MTRPbF 100 100 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 1msec 100μsec ISD , Reverse Drain Current (A) 10 10 1 TJ = 150°C TJ = 25°C TJ = -40°C 1 DC 10msec VGS = 0V 0.1 0.0 0.5 1.0 1.5 Tc = 25°C Tj = 150°C Single Pulse 0.1 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 30 5.0 Fig 8. Maximum Safe Operating Area VGS(th) Gate threshold Voltage (V) 25 4.5 ID = 100μA ID = 250μA ID , Drain Current (A) 20 4.0 15 3.5 10 3.0 5 2.5 0 25 50 75 100 125 150 2.0 -75 -50 -25 0 25 50 75 100 125 150 TC , CaseTemperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 100 Fig 10. Threshold Voltage vs. Temperature D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τA τ1 τ2 τ3 τ4 τ4 τA 1 Ri (°C/W) 1.2801 8.7256 21.750 13.251 τi (sec) 0.000322 0.164798 2.25760 69 τJ 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τ i /Ri Ci= τ i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ 4 www.irf.com IRF6775MTRPbF m RDS (on), Drain-to -Source On Resistance ( Ω) 140 m RDS (on) , Drain-to-Source On Resistance ( Ω) 100 VGS = 10V 90 80 70 60 50 40 0 5 10 15 20 ID , Drain Current (A) TJ = 25°C TJ = 125°C ID = 5.6A 120 100 TJ = 125°C 80 60 TJ = 25°C 40 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. On-Resistance vs. Drain Current EAS, Single Pulse Avalanche Energy (mJ) 15V 140 120 100 80 60 40 20 0 25 50 75 100 125 150 VDS L DRIVER ID 1.1A 1.4A BOTTOM 11A TOP RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω Fig 15a. Unclamped Inductive Test Circuit V(BR)DSS tp Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current I AS Fig 15b. Unclamped Inductive Waveforms VDS VGS RG RD D.U.T. + 90% - VDD VDS 10% 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS td(on) tr td(off) tf www.irf.com Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms 5 IRF6775MTRPbF Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG * • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs 6 www.irf.com IRF6775MTRPbF DirectFET™ Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com 7 IRF6775MTRPbF DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 IMPERIAL MAX 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007 DirectFET™ Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 8 www.irf.com IRF6775MTRPbF DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7" reel, order IRF6775TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX CODE MIN MAX MIN MIN MAX MAX 12.992 N.C A 6.9 N.C 177.77 N.C 330.0 N.C 0.795 0.75 N.C B N.C 19.06 20.2 N.C N.C 0.504 C 0.53 0.50 0.520 13.5 12.8 13.2 12.8 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 3.937 E 2.31 N.C 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C 0.724 13.50 18.4 G 0.488 0.47 11.9 N.C 12.4 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 0.606 N.C 12.01 15.4 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 5.45 0.219 5.55 0.201 5.10 0.209 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/07 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/