IRF7105

PD - 91097E IRF7105 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS RDS(on) ID 25V 0.10 Ω 3.5A P-Ch -25V 0.25Ω -2.3A 2 7 3 6 4 5 P-CHANNEL MOSFET Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C I D @ TA = 70°C IDM P D @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. N-Channel 3.5 2.8 14 2.0 0.016 ± 20 3.0 -55 to + 150 -3.0 P-Channel -2.3 -1.8 -10 Units A W W/°C V V/nS °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient „ Parameter Min. ––– Typ. ––– Max. 62.5 Units °C/W www.irf.com 1 07/18/03 IRF7105 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 25 -25 — — — — — — 1.0 -1.0 — — — — — — –– — — — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.030 — -0.015 — 0.083 0.10 0.14 0.16 0.16 0.25 0.30 0.40 — 3.0 — -3.0 4.3 — 3.1 — — 2.0 — -2.0 — 25 — -25 — ±100 9.4 27 10 25 1.7 — 1.9 — 3.1 — 2.8 — 7.0 20 12 40 9.0 20 13 40 45 90 45 90 25 50 37 50 4.0 — 6.0 — 330 — 290 — 250 — 210 — 61 — 67 — Units V V/°C Ω V S µA Conditions VGS = 0V, I D = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, I D = 1.0A ƒ VGS = 4.5V, ID = 0.50A ƒ VGS = -10V, ID = -1.0A ƒ VGS = -4.5V, I D = -0.50A ƒ VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 3.5A ƒ VDS = -15V, I D = -3.5A ƒ VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V, VDS = 20V, VGS = 0V, TJ = 55°C VDS = -20V, V GS = 0V, TJ = 55°C VGS = ± 20V N-Channel I D = 2.3A, VDS = 12.5V, VGS = 10V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) g fs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LD LS C iss C oss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total GateCharge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ƒ P-Channel I D = -2.3A, VDS = -12.5V, VGS = -10V N-Channel VDD = 25V, I D = 1.0A, RG = 6.0Ω, RD = 2 5 Ω P-Channel VDD = -25V, ID = -1.0A, RG = 6.0Ω, RD = 2 5 Ω Between lead , 6mm (0.25in.)from package and center of die contact N-Channel VGS = 0V, V DS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz ns ƒ nH pF Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions — — 2.0 — — -2.0 A — — 14 — — -9.2 — — 1.2 TJ = 25°C, IS = 1.3A, VGS = 0V ƒ V — — -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V ƒ — 36 54 N-Channel ns — 69 100 TJ = 25°C, IF = 1.3A, di/dt = 100A/µs — 41 75 P-Channel ƒ nC TJ = 25°C, I F = -1.3A, di/dt = 100A/µs — 90 180 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. Notes: ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel I SD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com N-Channel ID , Drain-to-Source Current ( A ) IRF7105 ID , Drain-to-Source Current ( A ) VDS , Drain-to-Source Voltage ( V ) VDS , Drain-to-Source Voltage ( V ) Fig 1. Typical Output Characteristics ID , Drain-to-Source Current ( A ) Fig 2. Typical Output Characteristics RDS (on) , Drain-to-Source On Resistance VGS , Gate-to-Source Voltage ( V ) ( Normalized) TJ , Junction Temperature ( °C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature VGS , Gate-to-Source Voltage ( V ) C , Capacitance ( pF ) V DS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 3 IRF7105 I SD , Reverse Drain Current ( A ) N-Channel I D , Drain Current ( A ) VSD , Source-to-Drain Voltage ( V ) V DS , Drain-to-Source Voltage ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area VDS RD I D , Drain Current ( A ) VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + V - DD Fig 10a. Switching Time Test Circuit TA , Ambient Temperature ( °C ) VDS 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50KΩ 12V .2µF .3µF Fig 10b. Switching Time Waveforms D.U.T. + V - DS 10V QGS QG QGD VGS 3mA VG IG ID Charge Current Sampling Resistors Fig 11a. Gate Charge Test Circuit 4 Fig 11b. Basic Gate Charge Waveform www.irf.com P-Channel IRF7105 -ID , Drain-to-Source Current ( A ) -ID , Drain-to-Source Current ( A ) -VDS , Drain-to-Source Voltage ( V ) -V DS , Drain-to-Source Voltage ( V ) Fig 12. Typical Output Characteristics -ID , Drain-to-Source Current ( A ) Fig 13. Typical Output Characteristics RDS (on) , Drain-to-Source On Resistance -V GS , Gate-to-Source Voltage ( V ) ( Normalized) TJ , Junction Temperature ( °C ) Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance Vs. Temperature -V GS , Gate-to-Source Voltage ( V ) C , Capacitance ( pF ) -VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage 5 IRF7105 - ISD , Reverse Drain Current ( A ) P-Channel - ID , Drain Current ( A ) VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V ) Fig 18. Typical Source-Drain Diode Forward Voltage - ID , Drain Current ( A ) Fig 19. Maximum Safe Operating Area VDS VGS RG -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + Fig 21a. Switching Time Test Circuit TA , Ambient Temperature ( °C ) VDS 90% Fig 20. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50KΩ 12V .2µF .3µF Fig 21b. Switching Time Waveforms + D.U.T. VDS -10V QGS QG QGD VGS -3mA VG IG ID Charge Current Sampling Resistors Fig 22a. Gate Charge Test Circuit 6 Fig 22b. Basic Gate Charge Waveform www.irf.com - VDD N & P-Channel 100 IRF7105 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 IRF7105 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS* ** • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS 8 www.irf.com IRF7105 SO-8 Package Details Dimensions are shown in millimeters (inches) D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0.10 (.004) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 45° .050 BASIC .025 BASIC .2284 .011 0.16 0° .2440 .019 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0° 6.20 0.48 1.27 8° -CB 8X 0.25 (.010) NOTES: 1. 2. 3. 4. A1 M CASBS L θ RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking www.irf.com 9 IRF7105 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/03 10 www.irf.com