PD - 96102
IRF7105QPbF
HEXFET® Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7 6 5
D1 D1 D2 D2
N-Ch
VDSS RDS(on) ID 25V 0.10 Ω 3.5A
P-Ch
-25V 0.25Ω -2.3A
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C I D @ TA = 70°C IDM P D @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
N-Channel 3.5 2.8 14 2.0 0.016 ± 20 3.0 -55 to + 150 -3.0 P-Channel -2.3 -1.8 -10
Units
A W W/°C V V/nS °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
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IRF7105QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 25 -25 1.0 -1.0 Typ. Max. 0.030 -0.015 0.083 0.10 0.14 0.16 0.16 0.25 0.30 0.40 3.0 -3.0 4.3 3.1 2.0 -2.0 25 -25 ±100 9.4 27 10 25 1.7 1.9 3.1 2.8 7.0 20 12 40 9.0 20 13 40 45 90 45 90 25 50 37 50 4.0 6.0 330 290 250 210 61 67 Units V V/°C Ω V S µA Conditions VGS = 0V, I D = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, I D = 1.0A VGS = 4.5V, ID = 0.50A VGS = -10V, ID = -1.0A VGS = -4.5V, I D = -0.50A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 3.5A VDS = -15V, I D = -3.5A VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V, VDS = 20V, VGS = 0V, TJ = 55°C VDS = -20V, V GS = 0V, TJ = 55°C VGS = ± 20V N-Channel I D = 2.3A, VDS = 12.5V, VGS = 10V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) g fs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LD LS C iss C oss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total GateCharge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
P-Channel I D = -2.3A, VDS = -12.5V, VGS = -10V N-Channel VDD = 25V, I D = 1.0A, RG = 6.0Ω, RD = 2 5 Ω P-Channel VDD = -25V, ID = -1.0A, RG = 6.0Ω, RD = 2 5 Ω Between lead , 6mm (0.25in.)from package and center of die contact N-Channel VGS = 0V, V DS = 15V, = 1.0MHz P-Channel VGS = 0V, VDS = -15V, = 1.0MHz
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter IS I SM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions 2.0 -2.0 A 14 -9.2 1.2 TJ = 25°C, IS = 1.3A, VGS = 0V V -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V 36 54 N-Channel ns 69 100 TJ = 25°C, IF = 1.3A, di/dt = 100A/µs 41 75 P-Channel nC TJ = 25°C, I F = -1.3A, di/dt = 100A/µs 90 180 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel I SD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
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N-Channel
ID , Drain-to-Source Current ( A )
IRF7105QPbF
ID , Drain-to-Source Current ( A )
VDS , Drain-to-Source Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
ID , Drain-to-Source Current ( A )
Fig 2. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
VGS , Gate-to-Source Voltage ( V )
( Normalized)
TJ , Junction Temperature ( °C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
V DS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 3
IRF7105QPbF
I SD , Reverse Drain Current ( A )
N-Channel
I D , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V )
V DS , Drain-to-Source Voltage ( V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
VDS RD
I D , Drain Current ( A )
VGS RG 10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
D.U.T.
+
V - DD
Fig 10a. Switching Time Test Circuit
TA , Ambient Temperature ( °C )
VDS 90%
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Current Regulator Same Type as D.U.T.
10% VGS
td(on) tr t d(off) tf
50KΩ 12V .2µF .3µF
Fig 10b. Switching Time Waveforms
D.U.T. + V - DS
10V
QGS
QG QGD
VGS
3mA
VG
IG ID
Charge
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit 4
Fig 11b. Basic Gate Charge Waveform www.irf.com
P-Channel
IRF7105QPbF
-ID , Drain-to-Source Current ( A )
-ID , Drain-to-Source Current ( A )
-VDS , Drain-to-Source Voltage ( V )
-V DS , Drain-to-Source Voltage ( V )
Fig 12. Typical Output Characteristics
-ID , Drain-to-Source Current ( A )
Fig 13. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
-V GS , Gate-to-Source Voltage ( V )
( Normalized)
TJ , Junction Temperature ( °C )
Fig 14. Typical Transfer Characteristics
Fig 15. Normalized On-Resistance Vs. Temperature
-V GS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com
Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage 5
IRF7105QPbF
- ISD , Reverse Drain Current ( A )
P-Channel
- ID , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
Fig 18. Typical Source-Drain Diode Forward Voltage
- ID , Drain Current ( A )
Fig 19. Maximum Safe Operating Area
VDS VGS RG -10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
RD
D.U.T.
+
Fig 21a. Switching Time Test Circuit
TA , Ambient Temperature ( °C )
VDS 90%
Fig 20. Maximum Drain Current Vs. Ambient Temperature
Current Regulator Same Type as D.U.T.
10% VGS
td(on) tr t d(off) tf
50KΩ 12V .2µF .3µF
Fig 21b. Switching Time Waveforms
+ D.U.T. VDS
-10V
QGS
QG QGD
VGS
-3mA
VG
IG ID
Charge
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit 6
Fig 22b. Basic Gate Charge Waveform www.irf.com
-
VDD
N & P-Channel
100
IRF7105QPbF
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100
0.1 0.0001
t1, Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7105QPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ -
VDD
*
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS 8 www.irf.com
IRF7105QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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9
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7105QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007
10
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