PD - 95165
IRF7204PbF
Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S
1 2 3 4 8 7
A D D D D
S
S G
VDSS = -20V RDS(on) = 0.060Ω ID = -5.3A
6 5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-5.3 -4.2 -21 2.5 0.020 ± 12 -1.7 -55 to + 150
Units
A W W/°C V V/nS °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
50
Units
°C/W 10/6/04
IRF7204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) V GS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. -20 -1.0
Typ. Max. Units Conditions V VGS = 0V, ID = -250µA -0.022 V/°C Reference to 25°C, ID = -1mA 0.060 VGS = -10V, I D = -5.3A Ω 0.10 VGS = -4.5V, ID = -2.0A -2.5 V VDS = VGS, ID = -250µA 7.9 S VDS = -15V, ID = -5.3A -25 VDS = -16V, VGS = 0V µA -250 VDS = -16V, VGS = 0V, TJ = 125 °C -100 VGS = -12V nA 100 VGS = 12V 25 ID = -5.3A 5.0 nC VDS = -10V 8.0 VGS = -10V 14 30 VDD = -10V 26 60 ID = -1.0A ns 100 150 RG = 6.0Ω 68 100 R D = 1 0Ω 2.5 4.0 860 750 230 nH pF
D
Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0MHz
G S
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr ton
P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -2.5 showing the A G integral reverse -15 p-n junction diode. S -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V 85 100 ns TJ = 25°C, IF = -2.4A 77 120 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7204PbF
-ID , Drain-to-Source Current ( A )
-ID , Drain-to-Source Current ( A )
-VDS , Drain-to-Source Voltage ( V )
-VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
RDS (on) , Drain-to-Source On Resistance ( Normalized)
-ID , Drain-to-Source Current ( A )
TJ , Junction Temperature ( °C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF7204PbF
-VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
12
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
-ISD , Reverse Drain Current ( A )
OPERATION IN THIS AREA LIMITED BY RDS(on)
-ID , Drain Current (A) I
10
1ms
10ms
1 0.1
TA = 25 ° C TJ = 150° C Single Pulse
1 10 100
-VSD , Source-to-Drain Voltage ( V )
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF7204PbF
6.0
V DS VGS RG -10V
RD
5.0
D.U.T.
+
-ID , Drain Current (A)
4.0
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
3.0
2.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
1.0
VGS 10%
0.0
25
50
TC , Case Temperature ( ° C)
75
100
125
150
90%
Fig 9. Maximum Drain Current Vs. Ambient Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100
10
0.1 0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
V DD
IRF7204PbF
Current Regulator Same Type as D.U.T.
QG
50KΩ 12V .2µF .3µF
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRF7204PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
RG V GS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ V DD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS
IRF7204PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8°
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8°
6X
e
K L y
e1
A
K x 45° C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
IRF7204PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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