IRF7233

PD- 91849D IRF7233 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -12V RDS(on) = 0.020Ω 3 6 4 5 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 ±9.5 ±6.0 ±76 2.5 1.6 0.02 60 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 7/7/99 IRF7233 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 -12 ––– ––– ––– -0.6 3.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -5.0mA ––– ––– V VGS = 0V, I D = -250µA 0.001 ––– V/°C Reference to 25°C, ID = -1mA 0.013 0.020 VGS = -4.5V, I D = -9.5A ‚ Ω 0.023 0.033 VGS = -2.5V, I D = -6.0A ‚ ––– ––– V VDS = VGS, ID = -250µA ––– ––– S VDS = -10V, ID = -9.5A ––– -10 VDS = -12V, VGS = 0V ––– -1.0 VDS = -9.6V, VGS = 0V µA ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C ––– -100 nA VGS = -12V ––– 100 VGS = 12V 49 74 ID = -9.5A 9.3 14 nC VDS = -10V 22 32 VGS = -5.0V‚ 26 ––– VDD = -10V 540 ––– ID = -9.5A ns 77 ––– RD = 1.0Ω 370 ––– RG = 6.2Ω ‚ 4530 6000 VGS = 0V 2400 ––– pF VDS = -10V 2220 ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 43 35 -2.5 A -76 -1.2 65 52 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V ‚ TJ = 25°C, IF = -2.5A di/dt = 100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on 1 inch square copper board, t