IRF7240

PD- 93916 IRF7240 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -40V RDS(on) max 0.015@VGS = -10V 0.025@VGS = -4.5V ID -10.5A -8.4A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -10.5 -8.6 -43 2.5 1.6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 3/6/01 IRF7240 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -40 ––– ––– ––– -1.0 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.025 ––– ––– ––– ––– ––– ––– ––– ––– 73 31 17 52 490 210 97 9250 580 520 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.015 VGS = -10V, ID = -10.5A ‚ Ω 0.025 VGS = -4.5V, I D = -8.4A ‚ -3.0 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -10.5A -15 VDS = -32V, VGS = 0V µA -25 VDS = -32V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 110 ID = -10.5A 47 nC VDS = -20V 26 VGS = -10V ––– VDD = -20V ‚ ––– ID = -1.0A ns ––– RG = 6.0 Ω ––– VGS = -10V ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 43 75 -2.5 A -43 -1.2 65 110 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, IF = -2.5A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in square Cu board, t ≤ 5sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7240 1000 VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 1000 100 10 -I D , Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 100 VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 10 1 -2.70V 1 0.1 -2.70V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 150 ° C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -10.5A -I D , Drain-to-Source Current (A) 1.5 1 TJ = 25 ° C 1.0 0.1 0.5 0.01 2.5 V DS = -25V 20µs PULSE WIDTH 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7240 16000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd ID = -10.5A V DS = -32V V DS = -20V V DS = -8V -VGS , Gate-to-Source Voltage (V) 16 12000 C, Capacitance(pF) Ciss 8000 12 8 4000 4 Coss Crss 0 1 10 100 0 0 20 40 60 80 100 -V DS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 10 -ID , Drain Current (A) I TJ = 150 ° C 100us 10 1ms TJ = 25 ° C 1 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7240 12 VDS 10 RD VGS RG D.U.T. + -ID , Drain Current (A) 8 VGS 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t2 0.01 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 100 5 IRF7240 R DS(on) , Drain-to -Source On Resistance ( Ω ) RDS (on) , Drain-to-Source On Resistance ( Ω ) 0.035 0.025 0.030 0.020 VGS = -4.5V 0.025 0.020 0.015 VGS = -10V 0.015 ID = -10.5A 0.010 0.0 4.0 8.0 12.0 16.0 0.010 0 10 20 30 40 50 -I D , Drain Current (A) -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7240 3.0 200 160 -V GS(th) , Variace ( V ) 2.5 ID = -250µA 2.0 Power (W) 120 80 40 1.5 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 T J , Temperature ( °C ) Time (sec) Fig 16. Typical Power Vs. Time Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 7 IRF7240 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 IRF7240 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 3 3 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 www.irf.com 9