IRF7241

PD- 94087 IRF7241 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -40V RDS(on) max (mΩ) 41@VGS = -10V 70@VGS = -4.5V ID -6.2A -5.0A Description New trench HEXFET® P ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 50 Units °C/W www.irf.com 1 1/26/01 IRF7241 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -40 ––– ––– ––– -1.0 8.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.03 25 45 ––– ––– ––– ––– ––– ––– 53 14 3.9 24 280 210 100 3220 160 190 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 41 VGS = -10V, ID = -6.2A ‚ mΩ 70 VGS = -4.5V, I D = -5.0A ‚ -3.0 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -6.2A -10 VDS = -32V, VGS = 0V µA -25 VDS = -32V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 80 ID = -6.2A 21 nC VDS = -32V 5.9 VGS = -10V ––– VDD = -20V ‚ ––– ID = -1.0A ns ––– RG = 6.0 Ω ––– VGS = -10V ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 32 45 -2.5 A -25 -1.2 48 68 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, IF = -2.5A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in square Cu board ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7241 1000 VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 10 10 1 1 -2.70V 0.1 0.01 0.1 -2.70V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -6.2A -I D, Drain-to-Source Current (Α ) 10.00 T J = 150°C 1.5 1.00 1.0 T J = 25°C 0.10 0.5 0.01 2.5 3.0 3.5 VDS = -25V 20µs PULSE WIDTH 4.0 4.5 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7241 5000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd ID = -6.2A VDS = -32V VDS = -20V -VGS , Gate-to-Source Voltage (V) 4000 16 C, Capacitance(pF) Ciss 3000 Coss = C + C ds gd 12 2000 8 1000 Coss 0 1 4 Crss 0 10 100 0 20 40 60 80 100 -V DS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS (on) -ISD , Reverse Drain Current (A) 10 -I D , Drain-to-Source Current (A) 10 TJ = 150 ° C 100µsec 1msec 1 10msec Tc = 25°C Tj = 150°C Single Pulse 0 1 10 100 1000 1 TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7241 8.0 VDS VGS RD -I D , Drain Current (A) 6.0 D.U.T. + VGS 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - RG VDD 5 IRF7241 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS (on) , Drain-to-Source On Resistance ( Ω ) 0.10 0.08 0.08 0.06 VGS = -4.5V 0.06 0.04 ID = -6.2A 0.04 VGS = -10V 0.02 0 5 10 15 20 25 -I D , Drain Current (A) 0.02 2 6 10 14 18 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7241 3.0 100 -V GS(th) Gate threshold Voltage (V) 80 2.5 ID = -250µA Power (W) 60 40 2.0 20 1.5 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 T J , Temperature ( °C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7241 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 IRF7241 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/01 www.irf.com 9