IRF7304PBF

IRF7304PbF HEXFET® Power MOSFET l l l l l l l l PD - 95038 Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.090Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter I D @ TA = 25°C I D @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -4.7 -4.3 -3.4 -17 2.0 0.016 ±12 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Typ. ––– Max. 62.5 Units °C/W 10/6/04 IRF7304PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -20 ––– ––– V VGS = 0V, ID = -250µA ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.090 VGS = -4.5V, ID = -2.2A ƒ Ω ––– ––– 0.140 VGS = -2.7V, ID = -1.8A ƒ -0.70 ––– ––– V VDS = VGS, ID = -250µA 4.0 ––– ––– S VDS = -16V, ID = -2.2A ––– ––– -1.0 VDS = -16V, VGS = 0V µA ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C ––– ––– -100 VGS = -12V nA ––– ––– 100 VGS = 12V ––– ––– 22 ID = -2.2A ––– ––– 3.3 nC VDS = -16V ––– ––– 9.0 VGS = -4.5V, See Fig. 6 and 12 ƒ ––– 8.4 ––– VDD = -10V ––– 26 ––– ID = -2.2A ns ––– 51 ––– RG = 6.0Ω ––– 33 ––– RD = 4.5Ω, See Fig. 10 ƒ ––– ––– ––– ––– ––– 4.0 6.0 610 310 170 ––– nH ––– ––– ––– ––– pF D Between lead tip and center of die contact VGS = 0V VDS = -15V ƒ = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 56 71 -2.5 A -17 -1.0 84 110 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = -1.8A, VGS = 0V ƒ TJ = 25°C, IF = -2.2A di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C IRF7304PbF 100 -I D , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 1 1 -1.5V -1.5V 20µs PULSE WIDTH TJ = 25°C A 0.1 1 10 100 0.1 0.01 0.1 0.01 20µs PULSE WIDTH TJ = 150°C 0.1 1 10 100 A -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -3.6A -ID , Drain-to-Source Current (A) TJ = 25°C 10 TJ = 150°C 1.5 1.0 1 0.5 0.1 1.5 2.0 2.5 3.0 VDS = -15V 20µs PULSE WIDTH 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7304PbF 1500 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -2.2A VDS = -16V 8 C, Capacitance (pF) Ciss 1000 Coss Crss 500 6 4 2 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 12 15 20 25 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150°C TJ = 25°C -ID , Drain Current (A) I 10 1ms 1 0.1 0.3 0.6 0.9 1.2 VGS = 0V A 1.5 1 TA = 25 °C TJ = 150 °C Single Pulse 1 10 10ms 100 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF7304PbF V DS 5.0 RD V GS RG D.U.T. + 4.0 -ID , Drain Current (A) -4.5 V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 1.0 0.0 25 50 TC , Case Temperature ( °C) 75 100 125 150 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - V DD IRF7304PbF Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF QGS QGD VGS -3mA VG IG ID Charge Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit + -4.5 V D.U.T. - VDS IRF7304PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS* ** • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - V DD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRF7304PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A C 0.10 [.004] y K x 45° 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 IRF7304PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04