IRF7309

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.10Ω Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 4.7 4.0 3.2 16 1.4 0.011 ± 20 6.9 -55 to + 150 -6.0 Max. P-Channel -3.5 -3.0 -2.4 -12 Units A A A A W W/°C V V/ns °C Thermal Resistance Parameter RθJA Junction-to-Amb. (PCB Mount, steady state)** Min. –––– Typ. –––– Max. 90 Units °C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 147 IRF7309 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 30 — — -30 — — — 0.032 — — -0.037 — — — 0.050 — — 0.080 — — 0.10 — — 0.16 1.0 — — -1.0 — — 5.2 — — 2.5 — — — — 1.0 — — -1.0 — — 25 — — -25 –– — ±100 — — 25 — — 25 — — 2.9 — — 2.9 — — 7.9 — — 9.0 — 6.8 — — 11 — — 21 — — 17 — — 22 — — 25 — — 7.7 — — 18 — — 4.0 — — 6.0 — — 520 — — 440 — — 180 — — 200 — — 72 — — 93 — Units Conditions VGS = 0V, ID = 250µA V VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA V/°C Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.0A Ω VGS = -10V, ID = -1.8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250µA V VDS = VGS, ID = -250µA VDS = 15V, ID = 2.4A S VDS = -24V, ID = -1.8A VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V µA V = 24V, V = 0V, T = 125°C DS GS J VDS = -24V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V nC P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0Ω, RD = 3.8Ω ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0Ω, RD = 4.5Ω nH Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions — — 1.8 — — -1.8 A — — 16 — — -12 — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V V — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V — 47 71 N-Channel ns — 53 80 TJ = 25°C, IF = 2.6A, di/dt = 100A/µs P-Channel — 56 84 nC TJ = 25°C, IF = -2.2A, di/dt = 100A/µs — 66 99 Intrinsic turn-on time is neglegible (turn-on is dominated by L +LD) S Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. 148 IRF7309 N-Channel 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 4.5V 10 4.5V 10 1 0.1 20µs PULSE WIDTH TJ = 25°C 1 10 A 100 1 0.1 20µs PULSE WIDTH TJ = 150°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 150oC T = 25°C J TJ = 150°C R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 I D = 4.0A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 10 4 5 6 7 VDS = 15V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 VGS = 10V -40 -20 0 20 40 60 80 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 149 IRF7309 N-Channel 1000 800 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = C gs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 2.4A VDS = 24V 16 C, Capacitance (pF) Ciss 600 12 Coss 400 8 200 Crss 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 11 A 15 20 25 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-toSource Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) O PERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) 10 10 100µs TJ = 150°C 1ms TJ = 25°C 1 1 10ms 100ms 0.1 0.0 0.5 1.0 1.5 VGS = 0V 2.0 TA = 25°C TJ = 150°C Single Pulse A 0.1 0.1 A 1 10 100 2.5 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 150 Fig 8. Maximum Safe Operating Area IRF7309 N-Channel 4.0 ID, Drain Current (Amps) 3.0 2.0 Fig 10a. Switching Time Test Circuit 1.0 0.0 25 50 75 100 125 A 150 TA , Ambient Temperature (°C) Fig 9. Max. Drain Current Vs. Ambient Temp. Fig 10b. Switching Time Waveforms Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform P-Channel 100 -ID , Drain-to-Source Current (A) 10 -4.5V -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 1 0.1 20µs PULSE WIDTH TJ = 25°C 1 10 A 100 1 0.1 20µs PULSE WIDTH TJ = 150°C 1 10 100 A -VDS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics, T = 25oC J 151 Fig 13. Typical Output Characteristics,T = 150oC J IRF7309 P-Channel R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 I D = -3.0A -I D , Drain-to-Source Current (A) TJ = 25°C TJ = 150°C 1.5 10 1.0 0.5 1 4 5 6 7 VDS = -15V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 VGS = -10V -40 -20 0 20 40 60 80 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance Vs. Temperature 1000 20 -VGS , Gate-to-Source Voltage (V) 800 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd ID = -3.0A VDS = -24V 16 C, Capacitance (pF) 600 Ciss Coss 12 400 8 200 Crss 4 FOR TEST CIRCUIT SEE FIGURE 22 0 1 10 100 A 0 0 5 10 15 20 25 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 16. Typical Capacitance Vs. Drain-toSource Voltage Fig 17. Typical Gate Charge Vs. Gate-toSource Voltage 152 IRF7309 P-Channel 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) 10 10 100µs TJ = 150°C 1ms TJ = 25°C 1 1 10ms 100ms 0.1 0.0 0.3 0.6 0.9 VGS = 0V 1.2 A 0.1 TA = 25°C TJ = 150°C Single Pulse A 0.1 1 10 100 1.5 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 18. Typical Source-Drain Diode Forward Voltage Fig 19. Maximum Safe Operating Area 3.0 -ID, Drain Current (Amps) 2.0 Fig 21a. Switching Time Test Circuit 1.0 0.0 25 50 75 100 125 A 150 TA , AmbientTemperature (°C) Fig 20. Max.Drain Current Vs. Ambient Temp. Fig 21b. Switching Time Waveforms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t / t 2. Peak T =JP xZ DM 1 2 +T thJA A 0.1 0.00001 A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329. Package Outline Mechanical Drawing — See page 332. Part Marking Information — See page 332. Tape and Reel Information — See page 336. 154