PD - 95014A
IRF7309PbF
•
Lead-Free
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1
04/06/07
IRF7309PbF
nA
2
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IRF7309PbF
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3
IRF7309PbF
4
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IRF7309PbF
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5
IRF7309PbF
6
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IRF7309PbF
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IRF7309PbF
8
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IRF7309PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS
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IRF7309PbF
SO-8 Package Details
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking
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IRF7309PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2007 www.irf.com 11
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