IRF7311

PD - 91435C IRF7311 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V RDS(on) = 0.029Ω 3 6 4 5 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 20 ± 12 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range A W mJ A mJ V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient… Symbol RθJA Limit 62.5 Units °C/W 5/29/01 IRF7311 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 ––– ––– ––– 0.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = 250µA 0.027 ––– V/°C Reference to 25°C, ID = 1mA 0.023 0.029 VGS = 4.5V, ID = 6.0A „ Ω 0.030 0.046 VGS = 2.7V, ID = 5.2A „ ––– ––– V VDS = V GS, ID = 250µA 20 ––– S V DS = 10V, ID = 6.0A ––– 1.0 VDS = 16V, VGS = 0V µA ––– 5.0 VDS = 16V, VGS = 0V, TJ = 55°C ––– 100 VGS = 12V nA ––– -100 VGS = -12V 18 27 ID = 6.0A 2.2 3.3 nC VDS = 10V 6.2 9.3 VGS = 4.5V, See Fig. 10 „ 8.1 12 VDD = 10V 17 25 ID = 1.0A ns 38 57 RG = 6.0Ω 31 47 R D = 10Ω „ 900 ––– VGS = 0V 430 ––– pF VDS = 15V 200 ––– ƒ = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– 2.5 A 26 1.0 77 86 V ns nC ––– 0.72 ––– 52 ––– 58 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.7A, VGS = 0V ƒ TJ = 25°C, IF = 1.7A di/dt = 100A/µs ƒ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Surface mounted on 1 in square Cu board IRF7311 100 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP 10 10 1.50V 1.50V 20µs PULSE WIDTH TJ = 25 °C 1 10 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 ISD , Reverse Drain Current (A) TJ = 150 ° C 10 TJ = 25 ° C 1 1.5 V DS = 10V 20µs PULSE WIDTH 2.0 2.5 3.0 1 0.4 0.6 0.8 1.0 1.2 V GS = 0 V 1.4 1.6 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7311 ID = 6.0A RDS(on) , Drain-to-Source On Resistance (Normalized) RDS (on) , Drain-to-Source On Resistance (Ω) 2.0 0.032 1.5 V G S = 2 .7V 0.028 1.0 0.024 0.5 VG S = 4 .5V 0.020 0 10 20 30 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( ° C) I D , Drain C urrent ( A ) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.05 RDS (on) , Drain-to-Source On Resistance (Ω) 300 EAS , Single Pulse Avalanche Energy (mJ) TOP 250 BOTTOM ID 1.8A 3.3A 4.1A 0.04 200 0.03 150 I D = 6 .6A 100 0.02 50 0.01 0 2 4 6 8 A 0 25 50 75 100 125 150 V G S , G ate-to-Source Volta g e ( V ) Starting TJ , Junction Temperature ( ° C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF7311 1600 -VGS , Gate-to-Source Voltage (V) V GS C iss C rs s C i ss C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 10 ID = 6.0A VDS = 10V 8 C , Capacitance (pF) 1200 C o ss 800 6 4 C r ss 400 2 0 1 10 100 A 0 0 5 10 15 20 25 30 V D S , D rain-to-S ourc e V olta g e ( V ) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7311 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 IRF7311 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 3 3 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 5/01