PD - 95039
IRF7313PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 30V RDS(on) = 0.029Ω
3 4
6 5
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Description
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C
Maximum
Units
V
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
30 ± 20 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150
A
W mJ A mJ V/ ns °C
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
RθJA
Limit
62.5
Units
°C/W 10/7/04
IRF7313PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 1.0
Typ. Max. Units Conditions V V GS = 0V, ID = 250µA 0.022 V/°C Reference to 25°C, ID = 1mA 0.023 0.029 V GS = 10V, ID = 5.8A Ω 0.032 0.046 V GS = 4.5V, ID = 4.7A V V DS = V GS, ID = 250µA 14 S V DS = 15V, ID = 5.8A 1.0 V DS = 24V, VGS = 0V µA 25 V DS = 24V, VGS = 0V, TJ = 55°C 100 V GS = 20V nA -100 V GS = -20V 22 33 I D = 5.8A 2.6 3.9 nC V DS = 15V 6.4 9.6 V GS = 10V, See Fig. 10 8.1 12 V DD = 15V 8.9 13 I D = 1.0A ns 26 39 R G = 6.0Ω 17 26 R D = 1 5Ω 650 V GS = 0V 320 pF V DS = 25V 130 = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 2.5 A 30 1.0 68 87 V ns nC 0.78 45 58
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.7A, VGS = 0V TJ = 25°C, IF = 1.7A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25°C, L = 10mH
RG = 25 Ω, IAS = 4.0A.
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7313PbF
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
10
3.0V
3.0V
1 0.1 1
20µs PULSE WIDTH TJ = 25°C A
10
1 0.1 1
20µs PULSE WIDTH TJ = 150°C A
10
V DS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
VDS
100
100
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 150°C
10
ISD , Reverse Drain Current (A)
TJ = 150°C
10
TJ = 25°C
1 3.0 3.5 4.0
VDS = 10V 20µs PULSE WIDTH
4.5
5.0
A
1 0.4 0.6 0.8 1.0 1.2
VGS = 0V
1.4
A
1.6
VGS , Gate-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
IRF7313PbF
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 5.8A
RDS (on) , Drain-to-Source On Resistance (Ω)
2.0
0.040
1.5
0.036
V GS = 4.5V
0.032
1.0
0.028
0.5
0.024
V GS = 10V
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
0.020 0 10 20 30 40
A
TJ , Junction Temperature ( °C)
I D , Drain Current (A)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain Current
RDS (on) , Drain-to-Source On Resistance (Ω)
E AS , Single Pulse Avalanche Energy (mJ)
0.12
200
TOP
160
0.10
BOTTOM
IID D 1.8A 3.2A 4.0A
0.08
120
0.06
I D = 5.8A
0.04
80
0.02
40
0.00 0 3 6 9 12 15
A
0 25 50 75 100 125
150
A
V GS , Gate-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Maximum Avalanche Energy Vs. Drain Current
IRF7313PbF
1200
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 5.8A VDS = 15V
C, Capacitance (pF)
900
16
Ciss Coss
12
600
8
300
Crss
4
0 1 10 100
A
0
0
10
20
30
40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7313PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8°
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8°
6X
e
K L y
e1
A C 0.10 [.004] y
K x 45°
8X b 0.25 [.010]
A1 CAB
8X L 7
8X c
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
IRF7313PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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