IRF7314

PD - 9.1436B PRELIMINARY l l l l l IRF7314 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.058Ω 3 6 4 5 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum -20 ± 12 -5.3 -4.3 -21 -2.5 2.0 1.3 150 -2.9 0.20 -5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dtƒ Junction and Storage Temperature Range A W mJ A mJ V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient… Symbol RθJA Limit 62.5 Units °C/W 11/18/97 IRF7314 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.70 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA 0.031 ––– V/°C Reference to 25°C, ID = -1mA 0.049 0.058 VGS = -4.5V, ID = -2.9A „ Ω 0.082 0.098 VGS = -2.7V, ID = -1.5A „ ––– ––– V VDS = VGS, ID = -250µA 5.9 ––– S VDS = -10V, ID = -1.5A ––– -1.0 VDS = -16V, VGS = 0V µA ––– -25 VDS = -16V, VGS = 0V, TJ = 55°C ––– 100 VGS = -12V nA ––– -100 VGS = 12V 19 29 ID = -2.9A 4.0 6.1 nC VDS = -16V 7.7 12 VGS = -4.5V, See Fig. 10 „ 15 22 VDD = -10V 40 60 ID = -2.9A ns 42 63 RG = 6.0Ω 49 73 RD = 3.4Ω „ 780 ––– VGS = 0V 470 ––– pF VDS = -15V 240 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– -2.5 A -21 V ns nC ––– -0.78 -1.0 ––– 47 71 ––– 49 73 Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = -2.9A, VGS = 0V ƒ TJ = 25°C, IF = -2.9A di/dt = 100A/µs ƒ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ I ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, SD TJ ≤ 150°C ‚ Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Surface mounted on FR-4 board, t ≤ 10sec. IRF7314 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP 10 10 -1.50V 1 1 -1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 -ISD , Reverse Drain Current (A) TJ = 150 ° C 10 TJ = 25 ° C 1 1 1.5 V DS = -10V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7314 R DS(on) , Drain-to-Source On Resistance ( Ω ) 2.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = - 2.9A 0.8 1.5 0.6 V G S = - 2.7V 1.0 0.4 0.5 0.2 V G S = - 4.5V 0.0 0 4 8 12 16 20 0 .0 -60 -40 -20 0 20 40 60 80 V G S = - 4.5V 100 120 140 160 A A T J , Junction T em perature (°C ) -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R DS(on) , Drain-to-Source On Resistance ( Ω ) 0.08 400 EAS , Single Pulse Avalanche Energy (mJ) 0.07 ID -1.3A -2.3A BOTTOM -2.9A TOP 300 0.06 200 I D = - 5.3A 0.05 100 0.04 0.03 0.0 2.0 4.0 6.0 8.0 A 0 25 50 75 100 125 150 V G S , G ate-to-Source Volta g e (V) Starting TJ , Junction Temperature ( °C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF7314 1400 1200 -V G S , Gate-to-Source Voltage (V) V GS C is s C rs s C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd 10 I D = - 2.9A V D S = - 16V 8 C , C apacitanc e (pF ) 1000 C is s C oss 800 6 600 4 400 C rs s 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A -VD S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7314 Package Outline SO8 Outline D -B- D IM 5 I NCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45° e1 A e e1 H K L θ .050 BASIC .025 BASIC .2284 .011 0.16 0° .2440 .019 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0° 6.20 0.48 1.27 8° θ 0.10 (.004) 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS L 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101 TOP PART NUMBER BO TTO M IRF7314 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TE R M IN AL N U M B ER 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IR EC T IO N N O TE S : 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 . 3 30.00 (12.992) M A X. 14.40 ( .566 ) 12.40 ( .488 ) N O T ES : 1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER . 2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97