IRF7317

PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 P -C H AN N E L MO S FET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. RDS(on) 0.029Ω 0.058Ω T o p V ie w S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 100 4.1 0.20 5.0 -5.0 -55 to + 150 °C N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 150 -2.9 Maximum P-Channel -20 ± 12 -5.3 -4.3 -21 -2.5 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range A W mJ A mJ V/ ns Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient … Symbol RθJA Limit 62.5 Units °C/W 12/9/97 IRF7317 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 — — — — — — 0.7 -0.7 — — — — — — –– — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.027 — 0.031 — 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 — — — — 20 — 5.9 — — 1.0 — -1.0 — 5.0 — -25 — ±100 18 27 19 29 2.2 3.3 4.0 6.1 6.2 9.3 7.7 12 8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 — 780 — 430 — 470 — 200 — 240 — Units V V/°C Ω Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 4.5V, ID = 6.0A „ VGS = 2.7V, ID = 5.2A „ VGS = -4.5V, ID = -2.9A „ VGS = -2.7V, ID = -1.5A „ VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 10V, ID = 6.0A „ VDS = -10V, ID = -1.5A „ VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 55°C VDS = -16V, VGS = 0V, TJ = 55°C VGS = ±12V N-Channel ID = 6.0A, VDS = 10V, VGS = 4.5V nC P-Channel ID = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω ns P-Channel VDD = -10V, ID = -2.9A, RG = 6.0Ω, RD = 3.4Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V S IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance µA nA „ „ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 2.5 — — -2.5 A — — 26 — — -21 — 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V ƒ V — -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V ƒ — 52 77 N-Channel ns — 47 71 TJ = 25°C, IF =1.7A, di/dt = 100A/µs — 58 86 P-Channel „ nC TJ = 25°C, IF = -2.9A, di/dt = 100A/µs — 49 73  Repetitive rating; pulse width limited by Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) … Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. N-Channel IRF7317 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP 100 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP 100 10 1.50V 1.50V 20µs PULSE WIDTH TJ = 25 °C 1 10 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 ISD , Reverse Drain Current (A) TJ = 150 ° C 10 TJ = 25 ° C 1 1.5 V DS = 10V 20µs PULSE WIDTH 2.0 2.5 3.0 1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7317 2.0 N-Channel R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 6.0A RDS (on) , Drain-to-Source On Resistance (Ω) 0.032 1.5 V G S = 2 .7V 0.028 1.0 0.024 0.5 VG S = 4 .5V 0.020 0 10 20 30 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( °C) I D , Drain C urrent ( A ) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.05 300 EAS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance (Ω) TOP 250 BOTTOM ID 1.8A 3.3A 4.1A 0.04 200 0.03 150 I D = 6 .6A 100 0.02 50 0.01 0 2 4 6 8 A 0 25 50 75 100 125 150 V G S , G ate-to-S ource V olta g e ( V ) Starting T , Junction Temperature( ° C) J Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current N-Channel 1600 IRF7317 10 -VGS , Gate-to-Source Voltage (V) V GS C iss C rss C i s s C oss = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd ID = 6.0A VDS = 10V 8 C , C apacitanc e (pF ) 1200 C oss 800 6 4 C rs s 400 2 0 1 10 100 A 0 0 5 10 15 20 25 30 V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7317 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP 10 10 -1.50V 1 1 -1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 -ISD , Reverse Drain Current (A) TJ = 150 ° C 10 TJ = 25 ° C 1 1 1.5 V DS = -10V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage P-Channel IRF7317 0.8 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = - 2.9A 1.5 RDS(on) , Drain-to-Source On Resistance ( Ω ) 2.0 0.6 V G S = - 2.7V 1.0 0.4 0.5 0.2 V G S = - 4.5V 0.0 0 4 8 12 16 20 0 .0 -60 -40 -20 0 20 40 60 80 V G S = - 4.5V 100 120 140 160 A A T J , Junction T em perature (°C ) -ID , Drain Current (A) -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( Ω ) 0.08 400 EAS , Single Pulse Avalanche Energy (mJ) 0.07 ID -1.3A -2.3A BOTTOM -2.9A TOP 300 0.06 200 I D = - 5.3A 0.05 100 0.04 0.03 0.0 2.0 4.0 6.0 8.0 A 0 25 50 75 100 125 150 V G S , G ate-to-Source Volta g e (V) Starting TJ , Junction Temperature ( °C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF7317 1400 P-Channel 10 -V G S , Gate-to-Source Voltage (V) 1200 V GS C is s C rs s C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd I D = - 2.9A V D S = - 16V 8 C , C apacitanc e (pF ) 1000 C is s C oss 6 800 600 4 400 C rs s 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A - -V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7317 Package Outline SO8 Outline D -B- DIM 5 I NCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45° e1 A e e1 H K L θ .050 BASIC .025 BASIC .2284 .011 0.16 0° .2440 .019 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0° 6.20 0.48 1.27 8° θ 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101 TOP PART NUMBER BO TTO M IRF7317 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TE R M IN AL N U M B ER 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IR EC T IO N N O TE S : 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 . 3 30.00 (12.992) M A X. 14.40 ( .566 ) 12.40 ( .488 ) N O T ES : 1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER . 2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/97