IRF7328PBF

PD - 95196 IRF7328PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Available in Tape & Reel ● L ead-Free ● ● VDSS -30V RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.4 -32 2.0 1.3 16 ± 20 -55 to + 150 Units V A W W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient ƒ Max. 62.5 Units °C/W www.irf.com 1 10/7/04 IRF7328PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.018 17 26.8 ––– ––– ––– ––– ––– ––– 52 9.8 8.3 13 15 198 98 2675 409 262 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 21 VGS = -10V, ID = -8.0A ‚ mΩ 32 VGS = -4.5V, ID = -6.8A ‚ -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -8.0A -15 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 78 ID = -8.0A ––– nC VDS = -15V ––– VGS = -10V 20 VDD = -15V, VGS = -10.0V 23 ID = -1.0A ns 297 RG = 6.0Ω 147 RD = 15Ω ‚ ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 37 36 -2.0 A -32 -1.2 56 54 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V ‚ TJ = 25°C, IF = -2.0A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 10sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7328PbF 100 100 VGS TOP -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V VGS -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 10 10 -2.7V 1 1 -2.7V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -8.0A -I D , Drain-to-Source Current (A) 1.5 10 TJ = 150° C 1.0 1 TJ = 25 ° C 0.5 0.1 2.0 V DS= -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7328PbF 4000 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 3000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 14 12 10 8 6 4 2 0 ID = -8A V DS= -24V V DS= -15V Ciss 2000 1000 Coss Crss 0 1 10 100 -VDS , Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 25 ° C -ID , Drain Current (A) I TJ = 150° C 100 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD ,Source-to-Drain Voltage (V) 1 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 10ms 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7328PbF 10.0 VDS 8.0 RD VGS RG -ID , Drain Current (A) D.U.T. + 6.0 VGS 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 TC , Case Temperature ( ° C) 75 100 125 150 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.1 1 10 100 1000 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7328PbF RDS ( on ) , Drain-to-Source On Resistance Ω ) ( ( , RDS(on) Drain-to -Source On ResistanceΩ ) 0.060 0.100 0.050 0.075 0.040 0.030 ID = -8.0A 0.050 VGS = -4.5V 0.025 VGS = -10V 0.020 0.010 0.000 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.000 0 10 20 30 40 50 60 70 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF QGS QGD VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7328PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB θ 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 7 IRF7328PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com